型号 功能描述 生产厂家 企业 LOGO 操作
H7N0307LSTL-E

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0307LSTL-E产品属性

  • 类型

    描述

  • 型号

    H7N0307LSTL-E

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2025-10-19 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
TO-220
68552
一级代理 原装正品假一罚十价格优势长期供货
RENESAS/瑞萨
2450+
TO263-3
6540
只做原装正品假一赔十为客户做到零风险!!
RENESAS
24+
TO-220
9000
只做原装正品 有挂有货 假一赔十
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
VBsemi(台湾微碧)
2447
TO-220F
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
RENESAS
23+
TO-220
7000
RENESAS
24+
TO-220
16900
原装正品现货支持实单
RENESAS
23+
TO-220
48283
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
21+
TO-220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
R
TO-220AB
22+
6000
十年配单,只做原装

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