型号 功能描述 生产厂家 企业 LOGO 操作
H7N0307LSTL-E

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0307LSTL-E产品属性

  • 类型

    描述

  • 型号

    H7N0307LSTL-E

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2025-10-19 14:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
23+
TO-220
48283
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
21+
TO-220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
R
TO-220AB
22+
6000
十年配单,只做原装
RENESAS
2023+
TO-220
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS
20+
TO-220
50
进口原装现货,假一赔十
RENESAS
23+
TO-220
50000
全新原装正品现货,支持订货
RENESAS
2511
TO-220
50
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS
24+
TO-220
9000
只做原装正品 有挂有货 假一赔十
RENESAS/瑞萨
23+
TO220F
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择

H7N0307LSTL-E数据表相关新闻