Description

The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.

Features

 34A, 1200V

 Latch Free Operation

 Typical Fall Time - 780ns

 High Input Impedance

 Low Conduction Loss