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FSL2价格

参考价格：￥2.4085

型号：FSL206MRBN 品牌：Fairchild 备注：这里有FSL2多少钱，2026年最近7天走势，今日出价，今日竞价，FSL2批发/采购报价，FSL2行情走势销售排行榜，FSL2报价。

型号	功能描述	生产厂家企业	LOGO
FSL206MRL	丝印代码：FSL206MR；Green Mode Power Switch 文件：528.12 Kbytes Page：16 Pages	ONSEMI 安森美半导体	ONSEMI
FSL206MRLX	丝印代码：FSL206MR；Green Mode Power Switch 文件：528.12 Kbytes Page：16 Pages	ONSEMI 安森美半导体	ONSEMI
FSL206MRN	丝印代码：FSL206MR；Green Mode Power Switch 文件：528.12 Kbytes Page：16 Pages	ONSEMI 安森美半导体	ONSEMI
FSL214	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev	INTERSIL	INTERSIL
FSL214D	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev	INTERSIL	INTERSIL
FSL214D1	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev	INTERSIL	INTERSIL
FSL214D3	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev	INTERSIL	INTERSIL
FSL214R	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev	INTERSIL	INTERSIL
FSL214R1	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev	INTERSIL	INTERSIL
FSL214R3	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev	INTERSIL	INTERSIL
FSL214R4	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev	INTERSIL	INTERSIL
FSL230	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL230D	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL230D1	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL230D3	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL230R	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL230R1	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL230R3	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL230R4	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL234D	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL234D1	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL234D3	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL234R	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL234R1	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL234R3	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL234R4	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL23A0D	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin	INTERSIL	INTERSIL
FSL23A0D1	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin	INTERSIL	INTERSIL
FSL23A0D3	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin	INTERSIL	INTERSIL
FSL23A0R	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin	INTERSIL	INTERSIL
FSL23A0R1	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin	INTERSIL	INTERSIL
FSL23A0R3	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin	INTERSIL	INTERSIL
FSL23A0R4	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin	INTERSIL	INTERSIL
FSL23A4D	5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL23A4D1	5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL23A4D3	5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL23A4R	5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL23A4R1	5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL23A4R3	5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL23A4R4	5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSL206MR	Green Mode Fairchild Power Switch (FPS?? 文件：911.8 Kbytes Page：14 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FSL206MR	FEBSPM3SPM45-M01MTCA Motion SPM3 45H Evaluation Board 文件：1.62432 Mbytes Page：28 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FSL206MR	Green Mode Power Switch 文件：528.12 Kbytes Page：16 Pages	ONSEMI 安森美半导体	ONSEMI
FSL206MRBN	丝印代码：L206MRB；Green Mode Power Switch 文件：528.12 Kbytes Page：16 Pages	ONSEMI 安森美半导体	ONSEMI
FSL206MRBN	Green Mode Fairchild Power Switch (FPS?? 文件：911.8 Kbytes Page：14 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FSL206MRBN	New Products, Tips and Tools for Power and Mobile Applications 文件：3.23672 Mbytes Page：12 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FSL206MRL	Green Mode Fairchild Power Switch (FPS?? 文件：911.8 Kbytes Page：14 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FSL206MRL	New Products, Tips and Tools for Power and Mobile Applications 文件：3.23672 Mbytes Page：12 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FSL206MRL	封装/外壳：8-SMD，鸥翼包装：卷带（TR）描述：IC OFFLINE SWITCH FLYBACK 8LSOP 集成电路（IC） AC DC 转换器，离线开关	ONSEMI 安森美半导体	ONSEMI
FSL206MRLX	封装/外壳：8-SMD，鸥翼包装：管件描述：IC OFFLINE SWITCH FLYBACK 8LSOP 集成电路（IC） AC DC 转换器，离线开关	ONSEMI 安森美半导体	ONSEMI
FSL206MRN	New Products, Tips and Tools for Power and Mobile Applications 文件：3.23672 Mbytes Page：12 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FSL206MRN	Green Mode Fairchild Power Switch (FPS?? 文件：911.8 Kbytes Page：14 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FSL210T	Surface Mount Schottky Rectifier 文件：363.51 Kbytes Page：4 Pages	GOOD-ARK 固锝电子	GOOD-ARK
FSL214	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	RENESAS 瑞萨	RENESAS
FSL23	肖特基整流管	GOOD-ARK 固锝电子	GOOD-ARK
FSL23	Surface Mount Schottky Rectifier 文件：378.96 Kbytes Page：4 Pages	GOOD-ARK 固锝电子	GOOD-ARK
FSL230	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	RENESAS 瑞萨	RENESAS
FSL23S_15	Surface Mount Schottky Rectifier Reverse Voltage 30V Forward Current 2A 文件：213.09 Kbytes Page：4 Pages	GOOD-ARK 固锝电子	GOOD-ARK
FSL24	Surface Mount Schottky Rectifier 文件：363.07 Kbytes Page：4 Pages	GOOD-ARK 固锝电子	GOOD-ARK
FSL24_15	Surface Mount Schottky Rectifier Reverse Voltage 40V Forward Current 2A 文件：203.85 Kbytes Page：4 Pages	GOOD-ARK 固锝电子	GOOD-ARK

FSL2产品属性

类型
描述
型号
FSL2
制造商
FAIRCHILD
制造商全称
Fairchild Semiconductor
功能描述
Green Mode Fairchild Power Switch(FPSa?￠)

FSL2供应商更多...

更新时间：2026-3-15 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	FSL206MRLX	ONSEMI	25+	LSOP8	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市得捷芯城科技有限公司	FSL206MRLX	ONSEMI	25+	LSOP8	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市科芯源微电子有限公司	FSL206MRL	FAIRCHILD/仙童	2026+	SOP8	54648	百分百原装现货实单必成欢迎询价	询价
深圳市明嘉莱科技有限公司	FSL206MRL	FAIRCHILD/仙童	24+	SOP8	990000	明嘉莱只做原装正品现货	询价
标准国际(香港)有限公司	FSL206MRL	FSC	25+	NA	6000	全新原装!优势库存热卖中!	询价
深圳市鸿昌盛电子科技有限公司	FSL206MRL	ON	25+	SOP8	3000	公司优势库存热卖	询价
深圳市纳立科技有限公司	FSL206MRLX		三年内		1983	只做原装正品	询价
艾睿（深圳）半导体有限公司	FSL206MRLX	ON/安森美	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市创新迹电子有限公司	FSL206MRL	FAIRCHILD	22+	SOP	20000	公司只做原装品质保障	询价
万三科技(深圳)有限公司	FSL206MRLX	ON(安森美)	25+	LSOP-8	500000	源自原厂成本,高价回收工厂呆滞	询价

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找IC，尽在114IC

FSL2价格

FSL2产品属性

FSL2供应商更多...

FSL2芯片相关品牌

FSL2规格书下载地址

FSL2参数引脚图相关

FSL2数据表相关新闻

FSEZ1317MY

FSR03CE

FSM2JSMAATR

FSGM0465RUDTU原装现货

FSMD005-1206-R1206自恢复保险丝

fsk433M射频模块csma/ca防冲突碰撞模块支持并发上报星状自组网

DdatasheetPDF页码索引