FSL2价格

参考价格:¥2.4085

型号:FSL206MRBN 品牌:Fairchild 备注:这里有FSL2多少钱,2026年最近7天走势,今日出价,今日竞价,FSL2批发/采购报价,FSL2行情走势销售排行榜,FSL2报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

INTERSIL

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

INTERSIL

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

INTERSIL

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

INTERSIL

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

INTERSIL

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

INTERSIL

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

INTERSIL

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

INTERSIL

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

INTERSIL

6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

INTERSIL

6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

INTERSIL

6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

INTERSIL

6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

INTERSIL

6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

INTERSIL

6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

INTERSIL

5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

Green Mode Fairchild Power Switch (FPS??

文件:911.8 Kbytes Page:14 Pages

FAIRCHILD

仙童半导体

FEBSPM3SPM45-M01MTCA Motion SPM3 45H Evaluation Board

文件:1.62432 Mbytes Page:28 Pages

FAIRCHILD

仙童半导体

Green Mode Power Switch

文件:528.12 Kbytes Page:16 Pages

ONSEMI

安森美半导体

New Products, Tips and Tools for Power and Mobile Applications

文件:3.23672 Mbytes Page:12 Pages

FAIRCHILD

仙童半导体

Green Mode Fairchild Power Switch (FPS??

文件:911.8 Kbytes Page:14 Pages

FAIRCHILD

仙童半导体

Green Mode Power Switch

文件:528.12 Kbytes Page:16 Pages

ONSEMI

安森美半导体

Green Mode Fairchild Power Switch (FPS??

文件:911.8 Kbytes Page:14 Pages

FAIRCHILD

仙童半导体

New Products, Tips and Tools for Power and Mobile Applications

文件:3.23672 Mbytes Page:12 Pages

FAIRCHILD

仙童半导体

Green Mode Power Switch

文件:528.12 Kbytes Page:16 Pages

ONSEMI

安森美半导体

封装/外壳:8-SMD,鸥翼 包装:卷带(TR) 描述:IC OFFLINE SWITCH FLYBACK 8LSOP 集成电路(IC) AC DC 转换器,离线开关

ONSEMI

安森美半导体

Green Mode Power Switch

文件:528.12 Kbytes Page:16 Pages

ONSEMI

安森美半导体

封装/外壳:8-SMD,鸥翼 包装:管件 描述:IC OFFLINE SWITCH FLYBACK 8LSOP 集成电路(IC) AC DC 转换器,离线开关

ONSEMI

安森美半导体

New Products, Tips and Tools for Power and Mobile Applications

文件:3.23672 Mbytes Page:12 Pages

FAIRCHILD

仙童半导体

Green Mode Fairchild Power Switch (FPS??

文件:911.8 Kbytes Page:14 Pages

FAIRCHILD

仙童半导体

Green Mode Power Switch

文件:528.12 Kbytes Page:16 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Rectifier

文件:363.51 Kbytes Page:4 Pages

GOOD-ARK

固锝电子

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

RENESAS

瑞萨

肖特基整流管

GOOD-ARK

固锝电子

Surface Mount Schottky Rectifier

文件:378.96 Kbytes Page:4 Pages

GOOD-ARK

固锝电子

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

RENESAS

瑞萨

Surface Mount Schottky Rectifier Reverse Voltage 30V Forward Current 2A

文件:213.09 Kbytes Page:4 Pages

GOOD-ARK

固锝电子

Surface Mount Schottky Rectifier

文件:363.07 Kbytes Page:4 Pages

GOOD-ARK

固锝电子

Surface Mount Schottky Rectifier Reverse Voltage 40V Forward Current 2A

文件:203.85 Kbytes Page:4 Pages

GOOD-ARK

固锝电子

FSL2产品属性

  • 类型

    描述

  • 型号

    FSL2

  • 制造商

    Cooper Crouse-Hinds

更新时间:2026-1-28 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
N/A
18746
样件支持,可原厂排单订货!
onsemi
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
F
2026+
DIP
65248
百分百原装现货 实单必成
Fairchi
23+
NA
10826
专做原装正品,假一罚百!
TOKO
25+23+
SMD
40893
绝对原装正品全新进口深圳现货
FAIRCHILD/仙童
25+
7-LSOP
15000
一级代理原装现货
FAIRCHI
24+
SMD
12000
原厂/代理渠道价格优势
FAIRCHILD/仙童
2450+
SOP7
6540
只做原厂原装正品终端客户免费申请样品
HARRIS
CAN-3
68500
一级代理 原装正品假一罚十价格优势长期供货
Good-Ark Semiconductor
25+
SOD-123F
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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