位置：首页 > IC中文资料第6243页 > FSL23A0R
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL23A0R | 6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSL23A0R产品属性
- 类型
描述
- 型号
FSL23A0R
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild/ON |
21+ |
7LSOP |
13880 |
公司只售原装,支持实单 |
|||
23+ |
N/A |
46290 |
正品授权货源可靠 |
||||
TOKO |
22+ |
QFP |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD/仙童 |
22+ |
SOP-8 |
25000 |
只有原装绝对原装,支持BOM配单! |
|||
Fairich |
2020+ |
SOP7 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
GOOD-ARK/苏州固锝 |
21+ROHS |
100000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
ONSemiconductor |
23+ |
7-LSOP |
66800 |
优势价格原装正品 |
|||
TOKO |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TOKO |
23+ |
SMD |
7300 |
专注配单,只做原装进口现货 |
FSL23A0R芯片相关品牌
FSL23A0R规格书下载地址
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DdatasheetPDF页码索引
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