位置：首页 > IC中文资料第6243页 > FSL23A0D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL23A0D | 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL |   | |
FSL23A0D | 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | |
FSL23A0D产品属性
- 类型
描述
- 型号
FSL23A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
F |
2026+ |
DIP |
65248 |
百分百原装现货 实单必成 |
|||
onsemi |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Fairchi |
23+ |
NA |
10826 |
专做原装正品,假一罚百! |
|||
TOKO |
25+23+ |
SMD |
40893 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD/仙童 |
25+ |
7-LSOP |
15000 |
一级代理原装现货 |
|||
FAIRCHI |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
FAIRCHILD/仙童 |
2450+ |
SOP7 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
Fairchild/ON |
22+ |
7LSOP |
9000 |
原厂渠道,现货配单 |
|||
Good-Ark Semiconductor |
25+ |
SOD-123F |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
仙童 |
17+ |
NA |
6200 |
100%原装正品现货 |
FSL23A0D规格书下载地址
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DdatasheetPDF页码索引
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