位置：首页 > IC中文资料第6243页 > FSL23A0D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL23A0D | 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL |   | |
FSL23A0D | 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | INTERSIL | |
FSL23A0D产品属性
- 类型
描述
- 型号
FSL23A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2450+ |
SOP7 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
FAIRCHILD |
22+ |
SOP-7 |
20000 |
公司只做原装 品质保障 |
|||
FAIRCHILD/仙童 |
25+ |
7-LSOP |
15000 |
一级代理原装现货 |
|||
ONSemiconductor |
24+ |
7-LSOP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
TOKO |
25+23+ |
SMD |
40893 |
绝对原装正品全新进口深圳现货 |
|||
仙童 |
17+ |
NA |
6200 |
100%原装正品现货 |
|||
ON/安森美 |
2223+ |
SOP-8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON/安森美 |
25+ |
LSOP-7 |
860000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHI |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
Fairchild/ON |
22+ |
7LSOP |
9000 |
原厂渠道,现货配单 |
FSL23A0D规格书下载地址
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2019-4-2
DdatasheetPDF页码索引
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