位置：首页 > IC中文资料第6244页 > FSL23A4D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL23A4D | 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL |   | |
FSL23A4D | 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
Pushbutton switch, multiple options of caps, 1 amp 文件：1.13579 Mbytes Page：8 Pages | APEX-ELECTRONICS | |
FSL23A4D产品属性
- 类型
描述
- 型号
FSL23A4D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
2016+ |
DIP8 |
2600 |
本公司只做原装,假一罚十,可开17%增值税发票! |
|||
FAIRCHILD |
1539+ |
DIP |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FAIRCHI |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
ONSemiconductor |
25+ |
8-DIP |
90000 |
原厂正规渠道、保证进口原装现货假一罚十价格合理 |
|||
FAIRCHILD/仙童 |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ONSemiconductor |
24+ |
8-DIP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
FAIRCHILD/仙童 |
25+ |
DIP-8 |
30000 |
代理全新原装现货,价格优势 |
|||
25+23+ |
原厂原包 |
23976 |
绝对原装正品现货,全新深圳原装进口现货 |
||||
FAIRCILD |
22+ |
DIP-8 |
8000 |
原装正品支持实单 |
FSL23A4D芯片相关品牌
FSL23A4D规格书下载地址
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2019-4-2
DdatasheetPDF页码索引
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