位置：首页 > IC中文资料第6244页 > FSL23A4D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL23A4D | 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL |   | |
FSL23A4D | 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
Pushbutton switch, multiple options of caps, 1 amp 文件：1.13579 Mbytes Page：8 Pages | APEX-ELECTRONICS | |
FSL23A4D产品属性
- 类型
描述
- 型号
FSL23A4D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSemiconductor |
25+ |
8-DIP |
90000 |
原厂正规渠道、保证进口原装现货假一罚十价格合理 |
|||
FSC |
20+ |
8-DIP |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
25+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||||
FAIRCHIL |
24+ |
DIP8 |
5850 |
进口原管环保 |
|||
FAIRCHILD/仙童 |
25+ |
DIP-8 |
30000 |
代理全新原装现货,价格优势 |
|||
HONEY |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
|||
TDK/东电化 |
26+ |
SMD |
40000 |
全新原装数量均有多电话咨询 |
|||
FAI |
23+ |
DIP8 |
175 |
全新原装正品现货,支持订货 |
|||
FAI |
23+ |
DIP8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
FAIRCHILD/仙童 |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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FSL23A4D规格书下载地址
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DdatasheetPDF页码索引
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