位置：首页 > IC中文资料第6244页 > FSL23A4D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL23A4D | 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL |   | |
FSL23A4D | 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
Plug-in Signal Conditioners K-UNIT 文件：143.38 Kbytes Page：5 Pages | MSYSTEM 爱模 | |
FSL23A4D产品属性
- 类型
描述
- 型号
FSL23A4D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2223+ |
SOP-8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
Fairchild/ON |
22+ |
7LSOP |
9000 |
原厂渠道,现货配单 |
|||
TOKO |
25+23+ |
SMD |
40893 |
绝对原装正品全新进口深圳现货 |
|||
仙童 |
17+ |
NA |
6200 |
100%原装正品现货 |
|||
FAIRCHILD/仙童 |
2450+ |
SOP7 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
Fairchi |
23+ |
NA |
10826 |
专做原装正品,假一罚百! |
|||
FAIRCHI |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
ON/安森美 |
25+ |
LSOP-7 |
860000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
25+ |
7-LSOP |
15000 |
一级代理原装现货 |
|||
F |
2026+ |
DIP |
65248 |
百分百原装现货 实单必成 |
FSL23A4D规格书下载地址
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DdatasheetPDF页码索引
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