60VN-ChannelMOSFET

Features •15A,60V,RDS(on)=60mΩ(Max.)@VGS=10V,ID=7.5A •LowGateCharge(Typ.11.5nC) •LowCrss(Typ.25pF) •100AvalancheTested •175°CMaximumJunctionTemperatureRating

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

60VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

60VN-ChannelEnhancementModePowerMOSFET

Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription The20N06usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

N-Channel60-V(D-S)MOSFET

文件：897.38 Kbytes Page：6 Pages

FastSwitching

文件：67.37 Kbytes Page：2 Pages

20Amps,60VoltsN-CHANNELMOSFET

文件：193.72 Kbytes Page：2 Pages