60V N-Channel MOSFET

Features • 15 A, 60 V, RDS(on)= 60 mΩ(Max.) @ VGS= 10 V, ID= 7.5 A • Low Gate Charge (Typ. 11.5 nC) • Low Crss (Typ. 25 pF) • 100 Avalanche Tested • 175°C Maximum Junction Temperature Rating

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.06Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®， 60 V，15 A，60 mΩ，TO-220F

60V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

N 沟道，QFET® MOSFET 60V，15.7A，52mΩ 功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，15.7 A，52 mΩ，TO-220F

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

N-Channel 60-V (D-S) MOSFET

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Fast Switching

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20A mps,60 Volts N-CHANNEL MOSFET

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