Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications

Features

• 15.7A, 60V, RDS(on) = 0.055Ω @VGS = 10 V

• Low gate charge ( typical 9.5 nC)

• Low Crss ( typical 35 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating