TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on)= 0.080 OHM

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK

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Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK

文件：293.59 Kbytes Page：11 Pages

Power MOSFET 20 Amps, 60 Volts N−Channel DPAK

Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

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Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件：227.27 Kbytes Page：8 Pages

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

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N-Channel 6 0-V (D-S) MOSFET

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Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK

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N-Channel 6 0-V (D-S) MOSFET

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N?묬hannel DPAK

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N?묬hannel DPAK

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N-Channel 6 0-V (D-S) MOSFET

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丝印代码：20N06；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

丝印代码：20N06；60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

Fast Switching

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20A mps,60 Volts N-CHANNEL MOSFET

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N-Channel 60-V (D-S) MOSFET

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