位置：首页 > IC中文资料第5870页 > MTD20N06
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MTD20N06 | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50 | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  |   |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50 | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK 文件：293.59 Kbytes Page：11 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK 文件：293.59 Kbytes Page：11 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：227.27 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：227.27 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：227.27 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel 6 0-V (D-S) MOSFET 文件：897.4 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK 文件：293.59 Kbytes Page：11 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel 6 0-V (D-S) MOSFET 文件：897.37 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N?묬hannel DPAK 文件：176.95 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N?묬hannel DPAK 文件：176.95 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel 6 0-V (D-S) MOSFET 文件：897.31 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | | |
60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 |  | | |
Fast Switching 文件：67.37 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
20A mps,60 Volts N-CHANNEL MOSFET 文件：193.72 Kbytes Page：2 Pages | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司 |  | | |
N-Channel 60-V (D-S) MOSFET 文件：897.38 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
MTD20N06产品属性
- 类型
描述
- 型号
MTD20N06
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO252 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ON |
17+ |
TO-252 |
6200 |
||||
ON/安森美 |
23+ |
TO252 |
15238 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
24+ |
TO252 |
30000 |
原装正品公司现货,假一赔十! |
|||
MOT |
TO-252 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON |
12+ |
TO-252(DPAK) |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
ON/安森美 |
24+ |
5000 |
只做原厂渠道 可追溯货源 |
||||
MOTOROLA/摩托罗拉 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON |
2025+ |
DPAK-2 |
32560 |
原装优势绝对有货 |
|||
ON/安森美 |
23+ |
SOT-252 |
50000 |
全新原装正品现货,支持订货 |
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MTD20N06规格书下载地址
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