HDTMOS E-FET™ Power Field Effect Transistor

DPAK for Surface Mount

N-Channel Enhancement-Mode Silicon Gate

This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applicationsin power supplies, converters and PWM motor controls,these devices are particularlywell suited for bridge circuits wherediode speed and commutating safe operating areas are criticaland offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSSand VDS(on)Specified at Elevated Temperature

• Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number