位置：首页 > IC中文资料第1408页 > MTD20N06HD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MTD20N06HD | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with | Motorola 摩托罗拉 |   | |
MTD20N06HD | Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK 文件：293.59 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so | Motorola 摩托罗拉 | | ||
Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK 文件：293.59 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：227.27 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：227.27 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：227.27 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 6 0-V (D-S) MOSFET 文件：897.4 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK 文件：293.59 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 6 0-V (D-S) MOSFET 文件：897.37 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | ||
Fast Switching 文件：67.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
20A mps,60 Volts N-CHANNEL MOSFET 文件：193.72 Kbytes Page：2 Pages | CHONGQING 重庆平伟实业 | | ||
N-Channel 60-V (D-S) MOSFET 文件：897.38 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | |
MTD20N06HD产品属性
- 类型
描述
- 型号
MTD20N06HD
- 制造商
ON Semiconductor
- 功能描述
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail
- 制造商
ON Semiconductor
- 功能描述
MOSFET N D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO252 |
12700 |
买原装认准中赛美 |
|||
ON |
2511 |
TO252 |
12800 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ON |
24+ |
TO252 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON |
24+ |
35200 |
一级代理/放心采购 |
||||
ON/安森美 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON |
23+ |
TO252 |
25630 |
原装正品 |
|||
ON |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
|||
ON |
21+ |
TO252 |
10000 |
只做原装,质量保证 |
|||
ON/安森美 |
24+ |
5000 |
只做原厂渠道 可追溯货源 |
MTD20N06HD规格书下载地址
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