TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK

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Power MOSFET 20 Amps, 60 Volts

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK

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Power MOSFET 20 Amps, 60 Volts N−Channel DPAK

Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK

Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

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Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

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Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

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N-Channel 6 0-V (D-S) MOSFET

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Power MOSFET 20 Amps, 60 Volts N?묬hannel DPAK

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N-Channel 6 0-V (D-S) MOSFET

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60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

Fast Switching

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20A mps,60 Volts N-CHANNEL MOSFET

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N-Channel 60-V (D-S) MOSFET

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