60V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

N 沟道，QFET® MOSFET 60V，15.7A，52mΩ 功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，15.7 A，52 mΩ，TO-220F

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

N-Channel 60-V (D-S) MOSFET

文件：897.38 Kbytes Page：6 Pages

Fast Switching

文件：67.37 Kbytes Page：2 Pages

20A mps,60 Volts N-CHANNEL MOSFET

文件：193.72 Kbytes Page：2 Pages