IGBT – Field Stop, Trench 650 V, 75 A

Description Using innovative field stop trench IGBT technology, onsemi’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • Maximum Junction Temperat

IGBT - Field Stop, Trench 650 V, 75 A

Description Using Novel Field Stop Trench IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. Features • Maxi

IGBT – Field Stop, Trench 650 V, 75 A

Description Using innovative field stop trench IGBT technology, onsemi’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • Maximum Junction Temperat

650 V、75 A、1.69 V、TO-247场截止 IGBT

650V, 75A，场截止沟道IGBT

650V, 75A Field Stop Trench IGBT

文件：922.83 Kbytes Page：10 Pages

封装/外壳：TO-247-3 包装：管件 描述：650V,75A FIELD STOP TRENCH IGBT 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.1V@IC=75A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

Field Stop Trench IGBT

文件：246.44 Kbytes Page：9 Pages

Field Stop Trench IGBT 650 V, 75 A

文件：340.62 Kbytes Page：9 Pages

Hybrid Field Stop Trench IGBT 650 V, 75 A, TO247

文件：261.649 Kbytes Page：10 Pages