IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

Hybrid Field Stop Trench IGBT 650 V, 75 A, TO247

文件：261.649 Kbytes Page：10 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT WITH SIC COPACK DIODE IGBT 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

Field Stop Trench IGBT

文件：246.44 Kbytes Page：9 Pages

Field Stop Trench IGBT 650 V, 75 A

文件：340.62 Kbytes Page：9 Pages

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.1V@IC=75A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters