Description

Using innovative field stop trench IGBT technology, onsemi’s new

series of field−stop trench IGBTs offer optimum performance for solar

inverter, UPS, welder, and digital power genera−tor where low

conduction and switching losses are essential.

Features

• Maximum Junction Temperature: TJ = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 75 A

• 100% of Parts Tested ILM

• High Input Impedance

• Tightened Parameter Distribution

• Short Circuit Ruggedness > 5 s @ 25°C

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Solar Inverter, UPS, Digital Power Generator