FGH60N60价格
参考价格:¥26.7278
型号:FGH60N60SFDTU 品牌:Fairchild 备注:这里有FGH60N60多少钱,2026年最近7天走势,今日出价,今日竞价,FGH60N60批发/采购报价,FGH60N60行情走势销售排行榜,FGH60N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FGH60N60 | IGBT - Field Stop 600 V, 60 A Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum | ONSEMI 安森美半导体 | ||
丝印代码:FGH60N60SFD;600 V, 60 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP | FAIRCHILD 仙童半导体 | |||
丝印代码:FGH60N60SFDTU;IGBT - Field Stop 600 V, 60 A Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S | ONSEMI 安森美半导体 | |||
丝印代码:FGH60N60SMD;IGBT - Field Stop 600 V, 60 A Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum | ONSEMI 安森美半导体 | |||
600V, 60A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. Features • High current capability • | FAIRCHILD 仙童半导体 | |||
600V, 60A Field Stop IGBT Using novel field stop IGBT technology, Fairchild’s field stop GBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ng losses are essential. | FAIRCHILD 仙童半导体 | |||
600 V, 60 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP | FAIRCHILD 仙童半导体 | |||
600V, 60A Field Stop IGBT Using novel field stop IGBT technology, Fairchild’s field stop GBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ng losses are essential. | FAIRCHILD 仙童半导体 | |||
Field-Stop IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.9V@IC=60A · High Speed Switching · Low Power Loss APPLICATIONS · Solar Converters · Welding Converters · PFC · UPS | ISC 无锡固电 | |||
IGBT,场截止,600V,60A Using novel field stop IGBT technology, this IGBT offers the optimum performance for solar inverter, UPS, welder, and PFC applications where low conduction and switching losses are essential. • High Current Capability\n• Low Saturation Voltage : VCE(sat) = 2.3V @ IC = 60 A\n• High Input Impedance\n• Fast Switching\n• RoHS Compliant; | ONSEMI 安森美半导体 | |||
600V, 60A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. Features • High current capability • | FAIRCHILD 仙童半导体 | |||
600V, 60A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature : | FAIRCHILD 仙童半导体 | |||
IGBT,600V,60A,场截止 飞兆半导体的场截止第二代 IGBT 新系列采用新型场截止 IGBT 技术,为光伏逆变器、UPS、焊机、通讯、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。 •最大结温TJ =175 °C\n•正温度系数,易于并联运行\n•高电流能力\n•低饱和电压:VCE(sat) =1.9V(典型值)@ IC = 60A\n•高输入阻抗\n•快速开关:EOFF =7.5uJ/A\n•紧密的参数分布\n•符合 RoHS 标准; | ONSEMI 安森美半导体 | |||
Field Stop IGBT DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.4V@IC= 60A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Induction Heating,UPS ·AC & DC motor controls and general purpose inverters | ISC 无锡固电 | |||
600V, 60A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. Features • High current capability • | FAIRCHILD 仙童半导体 | |||
600V, 60A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. Features • High current capability • | FAIRCHILD 仙童半导体 | |||
600V, 60A Field Stop IGBT | ONSEMI 安森美半导体 | |||
封装/外壳:TO-247-3 包装:管件 描述:IGBT FIELD STOP 600V 120A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | |||
封装/外壳:TO-247-3 包装:管件 描述:IGBT FIELD STOP 600V 120A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | |||
HiPerFET Power MOSFETs Single Die MOSFET HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swi | IXYS 艾赛斯 | |||
HIGH CURRENT MOSIGBT Coming Soon. If you have some information on related parts, please share useful information by adding links below. | IXYS 艾赛斯 | |||
Ultra-Low VCE(sat) IGBT Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot | IXYS 艾赛斯 | |||
Ultra-Low VCE(sat) IGBT Features ● International standard package SOT-227B ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) for minimum on-state conduction losses ● MOS Gate turn-on drive simplicity ● Low collector-to-cas | IXYS 艾赛斯 | |||
Ultra-Low VCE(sat) IGBT Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot | IXYS 艾赛斯 |
FGH60N60产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- V(BR)CES Typ (V):
600
- IC Max (A):
60
- VCE(sat) Typ (V):
2.2
- Eoff Typ (mJ):
0.67
- Eon Typ (mJ):
1.79
- Gate Charge Typ (nC):
198
- PD Max (W):
378
- Co-Packaged Diode:
No
- Package Type:
TO-247-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
TO-247 |
32000 |
FAIRCHILD/仙童全新特价FGH60N60SFD即刻询购立享优惠#长期有货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILDSEMICONDUCTOR |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON |
22+ |
TO247 |
20000 |
||||
FAIRCHILDSEMICONDUCTOR |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
FAIRCHILDSEMICONDUCTOR |
22+ |
N/A |
20098 |
现货,原厂原装假一罚十! |
|||
FAIRCHILDSEMICONDUCTOR |
16+ |
NA |
20098 |
原装现货支持BOM配单服务 |
|||
KEMET/基美 |
2022+ |
NA |
10000 |
只做原装,价格优惠,长期供货。 |
|||
ON |
26+ |
TO247 |
18000 |
||||
FAIRCHILD |
26+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
FGH60N60规格书下载地址
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DdatasheetPDF页码索引
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