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FGH60N60价格

参考价格:¥26.7278

型号:FGH60N60SFDTU 品牌:Fairchild 备注:这里有FGH60N60多少钱,2026年最近7天走势,今日出价,今日竞价,FGH60N60批发/采购报价,FGH60N60行情走势销售排行榜,FGH60N60报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FGH60N60

IGBT - Field Stop 600 V, 60 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum

ONSEMI

安森美半导体

丝印代码:FGH60N60SFD;600 V, 60 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP

FAIRCHILD

仙童半导体

丝印代码:FGH60N60SFDTU;IGBT - Field Stop 600 V, 60 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S

ONSEMI

安森美半导体

丝印代码:FGH60N60SMD;IGBT - Field Stop 600 V, 60 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum

ONSEMI

安森美半导体

600V, 60A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. Features • High current capability •

FAIRCHILD

仙童半导体

600V, 60A Field Stop IGBT

Using novel field stop IGBT technology, Fairchild’s field stop GBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ng losses are essential.

FAIRCHILD

仙童半导体

600 V, 60 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP

FAIRCHILD

仙童半导体

600V, 60A Field Stop IGBT

Using novel field stop IGBT technology, Fairchild’s field stop GBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ng losses are essential.

FAIRCHILD

仙童半导体

Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.9V@IC=60A · High Speed Switching · Low Power Loss APPLICATIONS · Solar Converters · Welding Converters · PFC · UPS

ISC

无锡固电

IGBT,场截止,600V,60A

Using novel field stop IGBT technology, this IGBT offers the optimum performance for solar inverter, UPS, welder, and PFC applications where low conduction and switching losses are essential. • High Current Capability\n• Low Saturation Voltage : VCE(sat) = 2.3V @ IC = 60 A\n• High Input Impedance\n• Fast Switching\n• RoHS Compliant;

ONSEMI

安森美半导体

600V, 60A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. Features • High current capability •

FAIRCHILD

仙童半导体

600V, 60A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature :

FAIRCHILD

仙童半导体

IGBT,600V,60A,场截止

飞兆半导体的场截止第二代 IGBT 新系列采用新型场截止 IGBT 技术,为光伏逆变器、UPS、焊机、通讯、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。 •最大结温TJ =175 °C\n•正温度系数,易于并联运行\n•高电流能力\n•低饱和电压:VCE(sat) =1.9V(典型值)@ IC = 60A\n•高输入阻抗\n•快速开关:EOFF =7.5uJ/A\n•紧密的参数分布\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Field Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.4V@IC= 60A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Induction Heating,UPS ·AC & DC motor controls and general purpose inverters

ISC

无锡固电

600V, 60A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. Features • High current capability •

FAIRCHILD

仙童半导体

600V, 60A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. Features • High current capability •

FAIRCHILD

仙童半导体

600V, 60A Field Stop IGBT

ONSEMI

安森美半导体

封装/外壳:TO-247-3 包装:管件 描述:IGBT FIELD STOP 600V 120A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

封装/外壳:TO-247-3 包装:管件 描述:IGBT FIELD STOP 600V 120A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swi

IXYS

艾赛斯

HIGH CURRENT MOSIGBT

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IXYS

艾赛斯

Ultra-Low VCE(sat) IGBT

Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot

IXYS

艾赛斯

Ultra-Low VCE(sat) IGBT

Features ● International standard package SOT-227B ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) for minimum on-state conduction losses ● MOS Gate turn-on drive simplicity ● Low collector-to-cas

IXYS

艾赛斯

Ultra-Low VCE(sat) IGBT

Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot

IXYS

艾赛斯

FGH60N60产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • V(BR)CES Typ (V):

    600

  • IC Max (A):

    60

  • VCE(sat) Typ (V):

    2.2

  • Eoff Typ (mJ):

    0.67

  • Eon Typ (mJ):

    1.79

  • Gate Charge Typ (nC):

    198

  • PD Max (W):

    378

  • Co-Packaged Diode:

    No

  • Package Type:

    TO-247-3

更新时间:2026-7-23 18:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
25+
TO-247
32000
FAIRCHILD/仙童全新特价FGH60N60SFD即刻询购立享优惠#长期有货
三年内
1983
只做原装正品
FAIRCHILDSEMICONDUCTOR
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
ON
22+
TO247
20000
FAIRCHILDSEMICONDUCTOR
21+
NA
12820
只做原装,质量保证
FAIRCHILDSEMICONDUCTOR
22+
N/A
20098
现货,原厂原装假一罚十!
FAIRCHILDSEMICONDUCTOR
16+
NA
20098
原装现货支持BOM配单服务
KEMET/基美
2022+
NA
10000
只做原装,价格优惠,长期供货。
ON
26+
TO247
18000
FAIRCHILD
26+
TO-247
20540
保证进口原装现货假一赔十

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