HIGH CURRENT MOSIGBT

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Ultra-Low VCE(sat) IGBT

Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 75A 300W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching

Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Features Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mo

HiPerFASTTM IGBT C2-Class High Speed IGBTs

HiPerFAST™ IGBT C2-Class High Speed IGBTs Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power suppl

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.5V@IC=50A · High Current Handling Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries

GenX3 600V IGBT

OVERVIEW IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabil

GenX3 600V IGBTs with Diode

High Speed PT IGBTs for 40-100kHz switching Features • Optimized for Low Switching Losses • Square RBSOA • High Avalanche Capability • Anti-Parallel Ultra Fast Diode • International Standard Packages Advantages • High Power Density • Low Gate Drive Requirement Applications • High Freque

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 75A 480W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

文件：839.36 Kbytes Page：4 Pages

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

Ultra-Low VCE(sat) IGBT

Features ● International standard package SOT-227B ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) for minimum on-state conduction losses ● MOS Gate turn-on drive simplicity ● Low collector-to-cas

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

600 V, 60 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP

Super Junction MOSFET

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