HIGH CURRENT MOSIGBT

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Ultra-Low VCE(sat) IGBT

Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 75A 300W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT IGBTs

Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching

Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Features Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mo

HiPerFASTTM IGBT C2-Class High Speed IGBTs

HiPerFAST™ IGBT C2-Class High Speed IGBTs Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power suppl

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.5V@IC=50A · High Current Handling Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries

GenX3 600V IGBT

OVERVIEW IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabil

GenX3 600V IGBTs with Diode

High Speed PT IGBTs for 40-100kHz switching Features • Optimized for Low Switching Losses • Square RBSOA • High Avalanche Capability • Anti-Parallel Ultra Fast Diode • International Standard Packages Advantages • High Power Density • Low Gate Drive Requirement Applications • High Freque

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 75A 480W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT 高频IGBT

PT 高频IGBT

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

文件：839.36 Kbytes Page：4 Pages

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

文件：839.36 Kbytes Page：4 Pages

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

Ultra-Low VCE(sat) IGBT

Features ● International standard package SOT-227B ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) for minimum on-state conduction losses ● MOS Gate turn-on drive simplicity ● Low collector-to-cas

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

600 V, 60 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP

Super Junction MOSFET

文件：401.12 Kbytes Page：5 Pages