型号 功能描述 生产厂家&企业 LOGO 操作
IXGT60N60

Ultra-LowVCE(sat)IGBT

Features •InternationalstandardpackageJEDECTO-247AD,TO-264,TO-268 •NewgenerationHDMOSTMprocess •LowVCE(sat)forminimumon-stateconductionlosses •Highcurrenthandlingcapability •MOSGateturn-ondrivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobot

IXYS

IXYS Integrated Circuits Division

IXYS
IXGT60N60

封装/外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA 包装:管件 描述:IGBT 600V 75A 300W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

IXYS Integrated Circuits Division

IXYS

Optimizedfor10-25kHzhardswitchingandupto100KHzresonantswitching

Optimizedfor10-25kHzhardswitchingandupto100KHzresonantswitching Features MediumfrequencyIGBT SquareRBSOA Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Applications PFCcircuits Uninterruptiblepowersupplies(UPS) Switched-mo

IXYS

IXYS Integrated Circuits Division

IXYS

HiPerFASTTMIGBTC2-ClassHighSpeedIGBTs

HiPerFAST™IGBTC2-ClassHighSpeedIGBTs Features VeryhighfrequencyIGBT SquareRBSOA Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Applications PFCcircuits Uninterruptiblepowersupplies(UPS) Switched-modeandresonant-modepowersuppl

IXYS

IXYS Integrated Circuits Division

IXYS

GenX3600VIGBTswithDiode

HighSpeedPTIGBTsfor40-100kHzswitching Features •OptimizedforLowSwitchingLosses •SquareRBSOA •HighAvalancheCapability •Anti-ParallelUltraFastDiode •InternationalStandardPackages Advantages •HighPowerDensity •LowGateDriveRequirement Applications •HighFreque

IXYS

IXYS Integrated Circuits Division

IXYS

封装/外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA 包装:管件 描述:IGBT 600V 75A 480W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

IXYS Integrated Circuits Division

IXYS

HiPerFASTTMIGBTswithDiode

HiPerFAST™IGBTswithDiode C2-ClassHighSpeedIGBTs Features •InternationalStandardPackageminiBLOC •AluminiumNitrideIsolation-HighPowerDissipation •Anti-ParallelUltraFastDiode •IsolationVoltage3000V~ •LowVCE(sat)forMinimumOn-StateConductionLosses •MOSGateTurn

IXYS

IXYS Integrated Circuits Division

IXYS

Ultra-LowVCE(sat)IGBT

Features ●InternationalstandardpackageSOT-227B ●Aluminiumnitrideisolation -highpowerdissipation ●Isolationvoltage3000V~ ●Veryhighcurrent,fastswitchingIGBT ●LowVCE(sat)forminimumon-stateconductionlosses ●MOSGateturn-ondrivesimplicity ●Lowcollector-to-cas

IXYS

IXYS Integrated Circuits Division

IXYS

HiPerFASTTMIGBTswithDiode

HiPerFAST™IGBTswithDiode C2-ClassHighSpeedIGBTs Features •InternationalStandardPackageminiBLOC •AluminiumNitrideIsolation-HighPowerDissipation •Anti-ParallelUltraFastDiode •IsolationVoltage3000V~ •LowVCE(sat)forMinimumOn-StateConductionLosses •MOSGateTurn

IXYS

IXYS Integrated Circuits Division

IXYS

600V,60AFieldStopIGBT

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.3V@IC=60A •HighInputImpedance •FastSwitching •RoHSCompliant GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstop IGBTsoffertheoptimumperformanceforsolarinverter,UP

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SuperJunctionMOSFET

文件:401.12 Kbytes Page:5 Pages

ADPOW

Advanced Power Technology

ADPOW

IXGT60N60产品属性

  • 类型

    描述

  • 型号

    IXGT60N60

  • 功能描述

    IGBT 晶体管 75 Amps 600V 1.7 Rds

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2024-5-3 17:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
23+
TO-268
90000
只做原厂渠道价格优势可提供技术支持
IXYS-艾赛斯
24+25+/26+27+
TO-268
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
IXYS
08+(pbfree)
TO-268
8866
IXYS
17+
TO-268
1100
全新原装 实单必成
IXYS
24+
TO-268-3,D?Pak(2 引线 + 接片
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
IXYS/艾赛斯
23+
TO-268
10000
公司只做原装正品
IXYS
2019+
TO-268
65500
原装正品货到付款,价格优势!
IXYS
17+
TO-268
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ALTERA
2022+
484FBGA
6000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
IXYS
21+
TO-268
50000
全新原装正品现货,支持订货

IXGT60N60芯片相关品牌

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    2019-9-17
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  • IXPD610-工业控制IC

    IXDP610数字脉宽调制器(DPWM)是一个可编程CMOSLSI器件接收数字从一个微处理器的脉冲宽度数据并生成两个相辅相成的,非重叠,脉冲宽度调制直接数字控制信号开关电源的桥梁。DPWM是根据操作直接控制的微处理器和与大多数标准的接口,轻松微处理器和微型计算机巴士。IXDP610封装在18引脚超薄的DP。所产生的PWM波形IXDP610从比较的结果输出的脉冲宽度计数器在脉冲宽度存储的电话号码锁存(见下文)。一个可编程“死时间”已被纳入PWM波形。死区时间逻辑禁用在每两个输出比较器输出的过渡所需的死区时间间隔。输出级提供互补PWM输出信号的能力下沉和采购20毫安的TTL电压水平。输出禁用

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