HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swi

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

Ultra-Low VCE(sat) IGBT

Features ● International standard package SOT-227B ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) for minimum on-state conduction losses ● MOS Gate turn-on drive simplicity ● Low collector-to-cas

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

600 V, 60 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP

Super Junction MOSFET

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