Ultra-Low VCE(sat) IGBT

Features ● International standard package SOT-227B ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) for minimum on-state conduction losses ● MOS Gate turn-on drive simplicity ● Low collector-to-cas

IGBT

DESCRIPTION · Low VCE(sat) for minimum on-stateconduction losses · Very high current, fast switchingIGBT · MOS Gate turn-on drive simplicity APPLICATIONS · AC motor speed control · DC servo and robot drives · Uninterruptible power supplies (UPS)

封装/外壳：SOT-227-4，miniBLOC 包装：托盘 描述：IGBT MOD 600V 100A 250W SOT227B 分立半导体产品 晶体管 - IGBT - 模块

PT IGBTs

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

PT IGBTs

PT IGBTs

封装/外壳：SOT-227-4，miniBLOC 包装：散装 描述：IGBT MOD 600V 75A 480W SOT227B 分立半导体产品 晶体管 - IGBT - 模块

HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swi

HIGH CURRENT MOSIGBT

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Ultra-Low VCE(sat) IGBT

Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot

Ultra-Low VCE(sat) IGBT

Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot