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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FGH30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 |   | |
FGH30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | | |
FGH30N6S2D | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 45A 167W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT 文件：259.31 Kbytes Page：11 Pages | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT 文件：259.31 Kbytes Page：11 Pages | Fairchild 仙童半导体 | |
FGH30N6S2D产品属性
- 类型
描述
- 型号
FGH30N6S2D
- 功能描述
IGBT 晶体管 Comp 600V N-Ch
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
NA |
60300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
23+ |
TO247 |
450 |
正规渠道,只有原装! |
|||
FAIRCHILD/仙童 |
2447 |
TO247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD/仙童 |
23+ |
TO247 |
50000 |
全新原装正品现货,支持订货 |
|||
FAI |
24+ |
30 |
|||||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
仙童 |
06+ |
TO-247 |
6000 |
原装库存 |
|||
Fairchild/ON |
22+ |
TO247 |
9000 |
原厂渠道,现货配单 |
|||
FS |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
FGH30N6S2D规格书下载地址
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DdatasheetPDF页码索引
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