位置：首页 > IC中文资料第818页 > FGH30N6S2D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FGH30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | FAIRCHILD 仙童半导体 |   | |
FGH30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | FAIRCHILD 仙童半导体 | | |
FGH30N6S2D | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 45A 167W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc | FAIRCHILD 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc | FAIRCHILD 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | FAIRCHILD 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | FAIRCHILD 仙童半导体 | |
FGH30N6S2D产品属性
- 类型
描述
- 型号
FGH30N6S2D
- 功能描述
IGBT 晶体管 Comp 600V N-Ch
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
90000 |
全新原装现货 |
||||
KEMET |
25+ |
6400 |
原厂原装,价格优势 |
||||
TOKIN |
2406+ |
DIP |
650 |
诚信经营!进口原装!量大价优! |
|||
FSC |
24+ |
NA |
27003 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHILDSEMICONDUCTOR |
22+ |
N/A |
20098 |
现货,原厂原装假一罚十! |
|||
TOKIN |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHIL |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
onsemi |
25+ |
TO-247-3 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
FGH30N6S2D规格书下载地址
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DdatasheetPDF页码索引
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