型号 功能描述 生产厂家 企业 LOGO 操作
FGH30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

FGH30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

FGH30N6S2D

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 45A 167W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT

文件:259.31 Kbytes Page:11 Pages

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT

文件:259.31 Kbytes Page:11 Pages

Fairchild

仙童半导体

FGH30N6S2D产品属性

  • 类型

    描述

  • 型号

    FGH30N6S2D

  • 功能描述

    IGBT 晶体管 Comp 600V N-Ch

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-11-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
17068
原装现货,当天可交货,原型号开票
FAIRCHILD/仙童
25+
TO247
80
原装正品,假一罚十!
FAIRCHIL
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
ON
1847+
TO247
450
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Fairchild(飞兆/仙童)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
FAIRCHILD
25+23+
TO247
37977
绝对原装正品全新进口深圳现货
FAIRCHILD/仙童
22+
TO247
12245
现货,原厂原装假一罚十!
ON
23+
TO247
450
正规渠道,只有原装!
FAI
24+
30
仙童
06+
TO-247
6000
原装库存

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