600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 45A 167W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

600V, SMPS II Series N-Channel IGBT

文件：259.31 Kbytes Page：11 Pages

600V, SMPS II Series N-Channel IGBT

文件：259.31 Kbytes Page：11 Pages