位置:首页 > IC中文资料第4361页 > FGP30N6S2D

型号 功能描述 生产厂家 企业 LOGO 操作
FGP30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

FAIRCHILD

仙童半导体

FGP30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

FAIRCHILD

仙童半导体

FGP30N6S2D

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 45A 167W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

FAIRCHILD

仙童半导体

FGP30N6S2D产品属性

  • 类型

    描述

  • 型号

    FGP30N6S2D

  • 功能描述

    IGBT 晶体管 Comp 600V N-Ch

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
TO-220-3
22360
样件支持,可原厂排单订货!
onsemi
25+
TO-220-3
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
三年内
1983
只做原装正品
YAMAICHI
24+/25+
38
原装正品现货库存价优
ZLG
23+
DIP7
69820
终端可以免费供样,支持BOM配单!
VISHAY/威世
24+
DO-204AL
50000
只做原装,欢迎询价,量大价优
ONSemiconductor
24+
NA
3402
进口原装正品优势供应
FAIRCHILD
原装
12289
一级代理 原装正品假一罚十价格优势长期供货
LEMO
25+
1
公司优势库存 热卖中!
VISHAY/威世
2019
DO-204AL
50000
原装现货支持BOM配单服务

FGP30N6S2D数据表相关新闻