型号 功能描述 生产厂家 企业 LOGO 操作
FGH30N6S2

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

Fairchild

仙童半导体

FGH30N6S2

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

Fairchild

仙童半导体

FGH30N6S2

600V, SMPS II Series N-Channel IGBT

文件:259.31 Kbytes Page:11 Pages

Fairchild

仙童半导体

FGH30N6S2

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 45A 167W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

FGH30N6S2

600V, SMPS II Series N-Channel IGBT

ONSEMI

安森美半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT

文件:259.31 Kbytes Page:11 Pages

Fairchild

仙童半导体

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 45A 167W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT

文件:259.31 Kbytes Page:11 Pages

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT

文件:259.31 Kbytes Page:11 Pages

Fairchild

仙童半导体

FGH30N6S2产品属性

  • 类型

    描述

  • 型号

    FGH30N6S2

  • 功能描述

    IGBT 晶体管 Sgl N-Ch 600V SMPS

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-1-2 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
23+
73826
原厂授权一级代理,专业海外优势订货,价格优势、品种
FAIRCHILD/仙童
23+
TO247
50000
全新原装正品现货,支持订货
FAIRCHIL
24+
TO-247
8866
FAIRCHILD
05+
原厂原装
6140
只做全新原装真实现货供应
Fairchild/ON
22+
TO247
9000
原厂渠道,现货配单
FS
24+
原厂封装
65250
支持样品,原装现货,提供技术支持!
FSC
24+
NA
27003
只做原装正品现货 欢迎来电查询15919825718
FAIRCHILD/仙童
25+
TO247
80
原装正品,假一罚十!
FAI
23+
65480
FSC/ON
23+
原包装原封 □□
10491
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存

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