位置：首页 > IC中文资料第862页 > FGB30N6S2D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FGB30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 |   | |
FGB30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | | |
600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT 文件：259.31 Kbytes Page：11 Pages | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | | ||
IGBT 600V 45A 167W TO263AB | ONSEMI 安森美半导体 | | ||
600V, SMPS II Series N-Channel IGBT 文件：259.31 Kbytes Page：11 Pages | Fairchild 仙童半导体 | |
FGB30N6S2D产品属性
- 类型
描述
- 型号
FGB30N6S2D
- 功能描述
IGBT 晶体管 Dl 600V Size 3 N-Ch
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
7500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD |
03+ |
S0T-263 |
134 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FSC/ON |
23+ |
原包装原封□□ |
1650 |
原装进口特价供应特价，原装元器件供应，支持开发样品更多详细咨询库存 |
|||
FAIRCHILD |
25+23+ |
TO263 |
24055 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
FAIRCHILD |
23+ |
TO-263 |
53818 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Fairchild/ON |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
|||
FSC |
24+ |
NA |
27003 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAI |
23+ |
65480 |
|||||
Fairchild(飞兆/仙童) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
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FGB30N6S2D规格书下载地址
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DdatasheetPDF页码索引
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