DMN311价格

参考价格:¥1.0274

型号:DMN3110S-7 品牌:Diodes 备注:这里有DMN311多少钱,2025年最近7天走势,今日出价,今日竞价,DMN311批发/采购报价,DMN311行情走势销售排行榜,DMN311报价。
型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel Enhancement Mode MOSFET

Features ® Vos =30Vio = 2A Rosin

TECHPUBLIC

台舟电子

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

ZPSEMIZP Semiconductor

至尚臻品

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

ZPSEMIZP Semiconductor

至尚臻品

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

ZPSEMIZP Semiconductor

至尚臻品

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:583.73 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:583.73 Kbytes Page:7 Pages

DIODES

美台半导体

Low On-Resistance

文件:332.55 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:187.95 Kbytes Page:2 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:332.55 Kbytes Page:6 Pages

DIODES

美台半导体

Low On-Resistance

文件:332.55 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:214.63 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:214.63 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:214.63 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:214.63 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:214.63 Kbytes Page:5 Pages

DIODES

美台半导体

Box Sealing Tape

文件:115.48 Kbytes Page:3 Pages

3M

MINIATURE FUSES - 5x20 mm

文件:100.12 Kbytes Page:2 Pages

Littelfuse

力特

SCREW TYPE SERIES

文件:361.6 Kbytes Page:1 Pages

DBLECTRO

Ultra Low Bias Current Varactor Bridge Operational Amplifiers

文件:50.19 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Ultra Low Bias Current Varactor Bridge Operational Amplifiers

文件:984.54 Kbytes Page:5 Pages

INTRONICS

DMN311产品属性

  • 类型

    描述

  • 型号

    DMN311

  • 制造商

    Diodes Incorporated

  • 功能描述

    MOSFET N CH 30V 3.3A SOT23

  • 制造商

    Diodes Incorporated

  • 功能描述

    MOSFET, N CH, 30V, 3.3A, SOT23

  • 制造商

    Diodes Incorporated

  • 功能描述

    MOSFET, N CH, 30V, 3.3A, SOT23; Transistor

  • Polarity

    N Channel; Continuous Drain Current

  • Id

    3.3A; Drain Source Voltage

  • Vds

    30V; On Resistance

  • Rds(on)

    0.054ohm; Rds(on) Test Voltage

  • Vgs

    10V; Power Dissipation

  • Pd

    740mW; No. of

  • Pins

    3 ;RoHS

  • Compliant

    Yes

更新时间:2025-10-20 20:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
25+
SOP-8
34205
DIODES/美台全新特价DMN3112SSS-13-F即刻询购立享优惠#长期有货
DIODES/美台
24+
NA/
2500
优势代理渠道,原装正品,可全系列订货开增值税票
DIODES/美台
25+
SOP8
54648
百分百原装现货 实单必成 欢迎询价
DIODES/美台
24+
SOP8
990000
明嘉莱只做原装正品现货
DIODES
1333+
SOP
60
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES
2016+
SOP8
10000
只做原装,假一罚十,公司可开17%增值税发票!
DIODES/美台
2450+
SOP-8P
9850
只做原厂原装正品现货或订货假一赔十!
SOP8
23+
NA
15659
振宏微专业只做正品,假一罚百!
DIODES
25+
SOP8
6780
百分百原装正品 真实公司现货库存 本公司只做原装 可
DIODES
25+23+
SOP8
37866
绝对原装正品全新进口深圳现货

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