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DMN311价格
参考价格：￥1.0274
型号：DMN3110S-7 品牌：Diodes 备注：这里有DMN311多少钱，2026年最近7天走势，今日出价，今日竞价，DMN311批发/采购报价，DMN311行情走势销售排行榜，DMN311报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：MN7；N-Channel Enhancement Mode MOSFET Features ® Vos =30Vio = 2A Rosin | TECHPUBLIC 台舟电子 |   | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device ( | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High | ZPSEMIZP Semiconductor 至尚臻品 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device ( | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High | ZPSEMIZP Semiconductor 至尚臻品 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High | ZPSEMIZP Semiconductor 至尚臻品 | | ||
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi | DIODES 美台半导体 | | ||
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：583.73 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：583.73 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：187.95 Kbytes Page：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | | ||
Low On-Resistance 文件：332.55 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：332.55 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
Low On-Resistance 文件：332.55 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
PRECISION VOLTAGE COMPARATOR ■ GENERAL DESCRIPTION The NJM311 is a voltage comparator that has low input currents. It is also designed to operate covering a wider range of supply voltages from Standard ±15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL,DTL and TTL as well a | NJRC 日本无线 | | ||
PRECISION VOLTAGE COMPARATOR ■ GENERAL DESCRIPTION The NJM311 is a voltage comparator that has low input currents. It is also designed to operate covering a wider range of supply voltages from Standard ±15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL,DTL and TTL as well a | NJRC 日本无线 | | ||
PRECISION VOLTAGE COMPARATOR ■ GENERAL DESCRIPTION The NJM311 is a voltage comparator that has low input currents. It is also designed to operate covering a wider range of supply voltages from Standard ±15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL,DTL and TTL as well a | NJRC 日本无线 | | ||
PRECISION VOLTAGE COMPARATORS SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
PRECISION VOLTAGE COMPARATORS SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |
DMN311产品属性
- 类型
描述
- 型号
DMN311
- 制造商
Diodes Incorporated
- 功能描述
MOSFET N CH 30V 3.3A SOT23
- 制造商
Diodes Incorporated
- 功能描述
MOSFET, N CH, 30V, 3.3A, SOT23
- 制造商
Diodes Incorporated
- 功能描述
MOSFET, N CH, 30V, 3.3A, SOT23; Transistor
- Polarity
N Channel; Continuous Drain Current
- Id
3.3A; Drain Source Voltage
- Vds
30V; On Resistance
- Rds(on)
0.054ohm; Rds(on) Test Voltage
- Vgs
10V; Power Dissipation
- Pd
740mW; No. of
- Pins
3 ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
24+ |
SOP8 |
36520 |
原装现货/放心购买 |
|||
DIODES |
22+ |
SOP-8 |
20000 |
公司只有原装 品质保证 |
|||
DIODES/美台 |
24+ |
SOP8 |
990000 |
明嘉莱只做原装正品现货 |
|||
SOP8 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
DIODES/美台 |
2450+ |
SOP-8P |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
DIODES |
25+23+ |
SOP8 |
37866 |
绝对原装正品全新进口深圳现货 |
|||
VBSEMI/微碧半导体 |
24+ |
SOP8 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
DIODES |
08+ROHS |
SOP-8 |
2512 |
全新 发货1-2天 |
|||
DIODES/美台 |
24+ |
SOP8 |
21574 |
郑重承诺只做原装进口现货 |
|||
DIODES/美台 |
新年份 |
SOP-8 |
33288 |
原装正品现货,实单带TP来谈! |
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