DMN311价格
参考价格：￥1.0274
型号：DMN3110S-7 品牌：Diodes 备注：这里有DMN311多少钱，2026年最近7天走势，今日出价，今日竞价，DMN311批发/采购报价，DMN311行情走势销售排行榜，DMN311报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：MN7；N-Channel Enhancement Mode MOSFET Features ® Vos =30Vio = 2A Rosin | TECHPUBLIC 台舟电子 |   | ||
N-CHANNEL ENHANCEMENT MODE MOSFET This new generation 30V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application, | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Low On-Resistance\n•Low Input Capacitance\n•Fast Switching Speed\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Device (Note 3)\n•Qualified to AEC-Q101 Standards for High Reliability\n•PPAP Capable (Note 4); | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High | ZPSEMIZP Semiconductor 至尚臻品 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device ( | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device ( | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High | ZPSEMIZP Semiconductor 至尚臻品 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High | ZPSEMIZP Semiconductor 至尚臻品 | | ||
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi | DIODES 美台半导体 | | ||
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：583.73 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：583.73 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Low On-Resistance 文件：332.55 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：187.95 Kbytes Page：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：332.55 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
Low On-Resistance 文件：332.55 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
PRECISION VOLTAGE COMPARATOR ■ GENERAL DESCRIPTION The NJM311 is a voltage comparator that has low input currents. It is also designed to operate covering a wider range of supply voltages from Standard ±15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL,DTL and TTL as well a | NJRC 日本无线 | | ||
PRECISION VOLTAGE COMPARATOR ■ GENERAL DESCRIPTION The NJM311 is a voltage comparator that has low input currents. It is also designed to operate covering a wider range of supply voltages from Standard ±15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL,DTL and TTL as well a | NJRC 日本无线 | | ||
PRECISION VOLTAGE COMPARATOR ■ GENERAL DESCRIPTION The NJM311 is a voltage comparator that has low input currents. It is also designed to operate covering a wider range of supply voltages from Standard ±15V op amp supplies down to the single 5V supply used for IC logic. Its output is compatible with RTL,DTL and TTL as well a | NJRC 日本无线 | | ||
PRECISION VOLTAGE COMPARATORS SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
PRECISION VOLTAGE COMPARATORS SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |
DMN311产品属性
- 类型
描述
- Automotive Compliant PPAP：
No
- Polarity：
N
- ESD Diodes：
Yes
- VDS：
30 V
- VGS：
12 ±V
- IDS @ TA = +25°C：
32 A
- PD @ TA = +25°C：
1.38 W
- RDS(ON) Max @ VGS (10V)：
N/A mΩ
- RDS(ON) Max @ VGS (4.5V)：
80 mΩ
- RDS(ON) Max @ VGS (2.5V)：
110 mΩ
- RDS(ON) Max @ VGS (1.8V)：
160 mΩ
- VGS (th) Max：
1.1 V
- QG Typ @ VGS = 4.5V (nC)：
1.09 nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
X2-DSN1006-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
25+ |
8-SOP |
6843 |
样件支持,可原厂排单订货! |
|||
Diodes Incorporated |
25+ |
8-SOP |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES |
2016+ |
SOP8 |
10000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES |
25+23+ |
SOP8 |
37866 |
绝对原装正品全新进口深圳现货 |
|||
DIODES/美台 |
2450+ |
SOP-8P |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
DIODES |
18+ |
SOP8 |
85600 |
保证进口原装可开17%增值税发票 |
|||
DIODES/美台 |
2447 |
SOP8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
DIODES |
22+ |
SOP-8 |
20000 |
公司只有原装 品质保证 |
|||
DIODES/美台 |
25+ |
SOP-8 |
34205 |
DIODES/美台全新特价DMN3112SSS-13-F即刻询购立享优惠#长期有货 |
|||
DIODES |
1333+ |
SOP |
60 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
DMN311芯片相关品牌
DMN311规格书下载地址
DMN311参数引脚图相关
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- dna芯片
- DMR07C
- DMR07A4
- DMR07A
- DMR06C4
- DMR06C
- DMR06A4
- DMR06A
- DMR01
- DMQ-XX
- DMPE-RS
- DMP10NK
- DMP10NJ
- DMO-XX
- DMO465R
- DMO063
- DMN601K
- DMN600V
- DMN5L06
- DMN5_15
- DMN5_10
- DMN4008LFG-7
- DMN3900UFA-7B
- DMN3730UFB-7
- DMN3730UFB4-7
- DMN3730U-7
- DMN3404L-7
- DMN3300U-7
- DMN32D2LV-7
- DMN32D2LFB4-7
- DMN32D2LDF-7
- DMN3200U-7
- DMN31D5UFZ-7B
- DMN3190LDW-7
- DMN3150LW-7
- DMN3150L-7
- DMN313DLT-7
- DMN3135LVT-7
- DMN3115UDM-7
- DMN3115UDM
- DMN3110S-7
- DMN30H4D0LFDE-7
- DMN30H4D0L-7
- DMN30H4D0L-13
- DMN30H14DLY-13
- DMN3070SSN-7
- DMN3067LW-7
- DMN3065LW-7
- DMN3065LW-13
- DMN3053L-7
- DMN3052LSS-13
- DMN3051LDM-7
- DMN3051L-7
- DMN3035LWN-7
- DMN3033LSN-7
- DMN3033LDM-7
- DMN3032LE-13
- DMN3030LSS-13
- DMN3030LFG-7
- DMN3029LFG-7
- DMN3026LVT-7
- DMN100
- DMMDB4R
- DMMDB4B
- DMMDB4A
- DMMDB3R
- DMMDB3B
- DMMDB3A
- DMM-B
- DMM7512
- DMM7510
- DMM6500
- DMM4050
- DMM4040
- DMM4020
- DM-LX3
- DM-LA
- DML0312
- DMJ6789
- DMJ6786
- DMJ6785
DMN311数据表相关新闻
DMN4468LSS资料规格参数
DMN4468LSS
2025-7-30DMN5L06DWK-7
DMN5L06DWK-7
2021-11-29DMN2075U-7，DIODES(美台)，SOT-23 ，45K，21+，
DMN2075U-7，DIODES(美台)，SOT-23 ，45K，21+，
2021-11-10DMN4031SSD-13
DMN4031SSD-13
2021-10-19DMN2046U-7SOT-23SOT233.4A20V热卖产品质量保证
DMN2046U-7SOT-23SOT233.4A20V热卖产品质量保证
2019-3-18DMN2046U-7SOT23Diodes20V优势产品原装现货进口热卖
DMN2046U-7 SOT23 Diodes 20V 优势产品原装现货进口热卖
2019-2-25
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
