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DMN311价格
参考价格：￥1.0274
型号：DMN3110S-7 品牌：Diodes 备注：这里有DMN311多少钱，2025年最近7天走势，今日出价，今日竞价，DMN311批发/采购报价，DMN311行情走势销售排行榜，DMN311报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeMOSFET Features ®Vos=30Vio=2A Rosin | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 |  |   | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device( | DIODES Diodes Incorporated |  | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMIZP Semiconductor 至尚臻品 |  | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMIZP Semiconductor 至尚臻品 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device( | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMIZP Semiconductor 至尚臻品 | | | |
SINGLEN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi | DIODES Diodes Incorporated | | | |
SINGLEN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInput | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInput | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：583.73 Kbytes Page：7 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：583.73 Kbytes Page：7 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：187.95 Kbytes Page：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | | | |
LowOn-Resistance 文件：332.55 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：332.55 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
LowOn-Resistance 文件：332.55 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：214.63 Kbytes Page：5 Pages | DIODES Diodes Incorporated | | | |
UltraLowBiasCurrentVaractorBridgeOperationalAmplifiers 文件：50.19 Kbytes Page：1 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
MINIATUREFUSES-5x20mm 文件：100.12 Kbytes Page：2 Pages | Littelfuselittelfuse 力特力特公司 |  | | |
SCREWTYPESERIES 文件：361.6 Kbytes Page：1 Pages | DBLECTRODB Lectro Inc 迪贝电子 |  | | |
UltraLowBiasCurrentVaractorBridgeOperationalAmplifiers 文件：984.54 Kbytes Page：5 Pages | INTRONICS Intronics Power, Inc. |  | | |
BoxSealingTape 文件：115.48 Kbytes Page：3 Pages | 3M 3M Electronics |  | |
DMN311产品属性
- 类型
描述
- 型号
DMN311
- 制造商
Diodes Incorporated
- 功能描述
MOSFET N CH 30V 3.3A SOT23
- 制造商
Diodes Incorporated
- 功能描述
MOSFET, N CH, 30V, 3.3A, SOT23
- 制造商
Diodes Incorporated
- 功能描述
MOSFET, N CH, 30V, 3.3A, SOT23; Transistor
- Polarity
N Channel; Continuous Drain Current
- Id
3.3A; Drain Source Voltage
- Vds
30V; On Resistance
- Rds(on)
0.054ohm; Rds(on) Test Voltage
- Vgs
10V; Power Dissipation
- Pd
740mW; No. of
- Pins
3 ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
DIODES |
2016+ |
SOP8 |
10000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES |
24+ |
SOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
DIODES/美台 |
25+ |
SOP8 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
DIODES/美台 |
24+ |
SOP8 |
990000 |
明嘉莱只做原装正品现货 |
|||
DIODES |
1333+ |
SOP |
60 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES |
21+ |
SOP-8 |
30060 |
原装现货假一赔十 |
|||
DIODES |
1742+ |
SOP-8 |
98215 |
只要网上有绝对有货!只做原装正品! |
|||
DIODES |
23+ |
SO-8 |
5000 |
原装正品现货 |
|||
SOP8 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
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DMN311数据表相关新闻
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DMN601DWK-7
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DMN2075U-7，DIODES(美台)，SOT-23，45K，21+，
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DMN4031SSD-13
2021-10-19DMN2046U-7SOT-23SOT233.4A20V热卖产品质量保证
DMN2046U-7SOT-23SOT233.4A20V热卖产品质量保证
2019-3-18DMN2046U-7SOT23Diodes20V优势产品原装现货进口热卖
DMN2046U-7SOT23Diodes20V优势产品原装现货进口热卖
2019-2-25
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