位置：首页 > IC中文资料第10616页 > DMN3112S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN3112S | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device( | DIODESDiodes Incorporated 达尔科技 |  |   |
DMN3112S | N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMI ZP Semiconductor |  | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device( | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMI ZP Semiconductor | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMI ZP Semiconductor | | | |
SINGLEN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 | | | |
SINGLEN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 | | | |
FLATWASHERSNYLONFIBRE [KEYSTONE] NYLONRETAININGWASHERS FLATWASHERS–NYLON&FIBRE INTERNALTOOTHWASHERS STEELLOCKWASHERS STEELFLATWASHERS | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
300MHzBandpassFilter 文件：57.4 Kbytes Page：3 Pages | KRKR Electronics, Inc. KR Electronics, Inc. |  | | |
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CommonModeLineFilters 文件：96.53 Kbytes Page：1 Pages | FRONTIER Frontier Electronics |  | |
DMN3112S产品属性
- 类型
描述
- 型号
DMN3112S
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
2020+ |
SOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
DIODES |
1333+ |
SOP |
60 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES |
2016+ |
SOT23 |
12000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Diodes |
20+/21+ |
SOT-23 |
9500 |
全新原装现货 |
|||
DIODES美台 |
22+21+ |
SOT-23 |
12000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
DIODES/美台 |
22+ |
SOT-23 |
354000 |
||||
DIODES/美台 |
23+ |
SOP-8 |
69000 |
全新原装现货热卖/代理品牌/可申请样品和规格书 |
|||
Diodes |
21+ |
8SOIC |
13880 |
公司只售原装,支持实单 |
|||
DIODES |
23+ |
SOT-23 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
DIODES/美台 |
2023+ |
SOT-23 |
4500 |
一级代理优势现货,全新正品直营店 |
DMN3112S芯片相关品牌
DMN3112S规格书下载地址
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DMN3112S数据表相关新闻
DMN601DWK-7
DMN601DWK-7
2021-11-30DMN5L06DWK-7
DMN5L06DWK-7
2021-11-29DMN2075U-7，DIODES(美台)，SOT-23 ，45K，21+，
DMN2075U-7，DIODES(美台)，SOT-23，45K，21+，
2021-11-10DMN4031SSD-13
DMN4031SSD-13
2021-10-19DMN2046U-7SOT-23SOT233.4A20V热卖产品质量保证
DMN2046U-7SOT-23SOT233.4A20V热卖产品质量保证
2019-3-18DMN2046U-7SOT23Diodes20V优势产品原装现货进口热卖
DMN2046U-7SOT23Diodes20V优势产品原装现货进口热卖
2019-2-25
DdatasheetPDF页码索引
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