位置：首页 > IC中文资料第10616页 > DMN3112S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN3112S | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device( | DIODESDiodes Incorporated 美台半导体 |  |   |
DMN3112S | N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMIZP Semiconductor 至尚臻品 |  | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device( | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMIZP Semiconductor 至尚臻品 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMIZP Semiconductor 至尚臻品 | | | |
SINGLEN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 美台半导体 | | | |
SINGLEN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 美台半导体 | | | |
FLATWASHERSNYLONFIBRE [KEYSTONE] NYLONRETAININGWASHERS FLATWASHERS–NYLON&FIBRE INTERNALTOOTHWASHERS STEELLOCKWASHERS STEELFLATWASHERS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
300MHzBandpassFilter 文件：57.4 Kbytes Page：3 Pages | KR KR Electronics, Inc. |  | | |
3/8SquareDriveSockets,SAE 文件：158.63 Kbytes Page：3 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
WASHERS 文件：68.27 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
CommonModeLineFilters 文件：96.53 Kbytes Page：1 Pages | FRONTIER Frontier Electronics |  | |
DMN3112S产品属性
- 类型
描述
- 型号
DMN3112S
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
24+ |
SOT23-3 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
DIODES |
24+ |
SOT23 |
5000 |
全新原装正品,现货销售 |
|||
DIODES/美台 |
2511 |
SOT23 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
DIODES/美台 |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
DIODES/美台 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
DIODES |
24+ |
SOT23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
DIODES/美台 |
2447 |
SOP8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
DIODES/美台 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
23+ |
SOP-8 |
50000 |
全新原装正品现货,支持订货 |
|||
DIODES |
24+ |
15000 |
DMN3112S芯片相关品牌
DMN3112S规格书下载地址
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DMN3112S数据表相关新闻
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2019-3-18DMN2046U-7SOT23Diodes20V优势产品原装现货进口热卖
DMN2046U-7SOT23Diodes20V优势产品原装现货进口热卖
2019-2-25
DdatasheetPDF页码索引
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