型号 功能描述 生产厂家 企业 LOGO 操作
DMN3112S

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (

DIODES

美台半导体

DMN3112S

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

ZPSEMIZP Semiconductor

至尚臻品

DMN3112S

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

ZPSEMIZP Semiconductor

至尚臻品

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

ZPSEMIZP Semiconductor

至尚臻品

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

FLAT WASHERS NYLON FIBRE

[KEYSTONE] NYLON RETAINING WASHERS FLAT WASHERS – NYLON & FIBRE INTERNAL TOOTH WASHERS STEEL LOCK WASHERS STEEL FLAT WASHERS

ETCList of Unclassifed Manufacturers

未分类制造商

3/8 Square Drive Sockets, SAE

文件:158.63 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

WASHERS

文件:68.27 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Common Mode Line Filters

文件:96.53 Kbytes Page:1 Pages

FRONTIER

300 MHz Bandpass Filter

文件:57.4 Kbytes Page:3 Pages

KR

DMN3112S产品属性

  • 类型

    描述

  • 型号

    DMN3112S

  • 制造商

    DIODES

  • 制造商全称

    Diodes Incorporated

  • 功能描述

    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

更新时间:2025-12-26 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
24+
NA/
15913
原装现货,当天可交货,原型号开票
DIODES
2016+
SOT23
12000
只做原装,假一罚十,公司可开17%增值税发票!
DIODES
24+
SOT23
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
DIODES/美台
25+
SOP8
54648
百分百原装现货 实单必成 欢迎询价
DIODES
1333+
SOP
60
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES/美台
25+
SOP-8
34205
DIODES/美台全新特价DMN3112SSS-13-F即刻询购立享优惠#长期有货
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
DIODES/美台
25+
NA
880000
明嘉莱只做原装正品现货
SOP8
23+
NA
15659
振宏微专业只做正品,假一罚百!
DIODES
25+23+
SOP8
37866
绝对原装正品全新进口深圳现货

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