N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi

N-CHANNEL ENHANCEMENT MODE MOSFET

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

very low cost voice and melody synthesizer with 4-bits CPU

General Description The APExx12 series are very low cost voice and melody synthesizer with 4-bits CPU. They have various features including 4-bits ALU, ROM, RAM, I/O ports, timers, clock generator, voice and melody synthesizer, and PWM (Direct drive) or D/A current outputs, etc. The audio synthes

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Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=47KΩ) • Complement to FJV4112R

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PIN Photodiode For optical control systems Features ● High sensitivity and low dark current ● For one-dimensional light-point position detection ● Good positional linearity ● Small plastic package ● Adoption of visible light cutoff resin

Vertical Driver for Video-Camera CCD Area-Image-Sensor

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