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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

CSD18511KCS 40V N-Channel NexFET™ Power MOSFET

1 Features • Low Qg and Qgd • Low RDS(ON) • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 2.1mΩ, TO-220 Ne

TI

德州仪器

CSD18511KCS 40V N-Channel NexFET™ Power MOSFET

1 Features • Low Qg and Qgd • Low RDS(ON) • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 2.1mΩ, TO-220 Ne

TI

德州仪器

CSD18511KTT 40-V N-Channel NexFET™ Power MOSFET

1 Features 1• Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, D2PAK (

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

CSD18511KTT 40-V N-Channel NexFET™ Power MOSFET

1 Features 1• Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, D2PAK (

TI

德州仪器

CSD18511KTT 40-V N-Channel NexFET™ Power MOSFET

1 Features 1• Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, D2PAK (

TI

德州仪器

CSD18511KTT 40-V N-Channel NexFET™ Power MOSFET

1 Features 1• Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, D2PAK (

TI

德州仪器

CSD18511Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Low RDS(ON) • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control 3 Descri

TI

德州仪器

CSD18511Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Low RDS(ON) • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control 3 Descri

TI

德州仪器

CSD18511Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Low RDS(ON) • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control 3 Descri

TI

德州仪器

CSD18511Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Low RDS(ON) • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control 3 Descri

TI

德州仪器

40-V N-Channel NexFET Power MOSFET

文件:353.4 Kbytes Page:10 Pages

TI

德州仪器

采用 TO-220 封装的单路、2.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

TI

德州仪器

采用 D2PAK 封装的单路、2.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

TI

德州仪器

40-V N-Channel NexFET Power MOSFET

文件:377.36 Kbytes Page:11 Pages

TI

德州仪器

40-V N-Channel NexFET Power MOSFET

文件:377.36 Kbytes Page:11 Pages

TI

德州仪器

CSD18511Q5A 40 V N-Channel NexFET Power MOSFET

文件:602.27 Kbytes Page:13 Pages

TI

德州仪器

采用 5mm x 6mm SON 封装的单路、2.3mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

TI

德州仪器

CSD18511Q5A 40 V N-Channel NexFET Power MOSFET

文件:602.27 Kbytes Page:13 Pages

TI

德州仪器

CSD18511产品属性

  • 类型

    描述

  • 型号

    CSD18511

  • 制造商

    C&K Components

更新时间:2025-11-22 17:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
-
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
TI(德州仪器)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
TI只做原装
23+
TO263
10065
原装正品,有挂有货,假一赔十
TI/德州仪器
24+
TO-263
47186
郑重承诺只做原装进口现货
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
TI/德州仪器
24+
TO-263-3
9600
原装现货,优势供应,支持实单!
TI/德州仪器
23+
TO-2203
5000
只有原装,欢迎来电咨询!
TI
三年内
1983
只做原装正品
TI
23+
TO-263-3
3200
公司只做原装,可来电咨询
TI/德州仪器
25+
原厂封装
10280

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