丝印代码：CSD18511KTT；CSD18511KTT 40-V N-Channel NexFET™ Power MOSFET

1 Features 1• Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, D2PAK (

丝印代码：CSD18511KTT；CSD18511KTT 40-V N-Channel NexFET™ Power MOSFET

1 Features 1• Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, D2PAK (

丝印代码：CSD18511KTT；CSD18511KTT 40-V N-Channel NexFET™ Power MOSFET

1 Features 1• Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, D2PAK (

丝印代码：CSD18511KTT；CSD18511KTT 40-V N-Channel NexFET™ Power MOSFET

1 Features 1• Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, D2PAK (

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

采用 D2PAK 封装的单路、2.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

This 40-V, 2.1-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. • Low Qg and Qgd\n• Low RDS(ON)\n• Low-Thermal Resistance\n• Avalanche Rated\n• Lead-Free Terminal Plating\n• RoHS Compliant\n• Halogen Free\n• D2PAK Plastic Package;

40-V N-Channel NexFET Power MOSFET

文件：377.36 Kbytes Page：11 Pages

40-V N-Channel NexFET Power MOSFET

文件：377.36 Kbytes Page：11 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

40-V N-Channel NexFET Power MOSFET

文件：353.4 Kbytes Page：10 Pages