丝印代码：CSD18511KCS；CSD18511KCS 40V N-Channel NexFET™ Power MOSFET

1 Features • Low Qg and Qgd • Low RDS(ON) • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 2.1mΩ, TO-220 Ne

丝印代码：CSD18511KCS；CSD18511KCS 40V N-Channel NexFET™ Power MOSFET

1 Features • Low Qg and Qgd • Low RDS(ON) • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 2.1mΩ, TO-220 Ne

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

采用 TO-220 封装的单路、2.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

此 40V、2.1mΩ、TO-220 NexFET™功率 MOSFET 被设计成大大降低功率转换 损耗的理想选择。 • 低 Qg 和 Qgd\n• 低 RDS(ON)\n• 低热阻\n• 雪崩额定值\n• 无铅引脚镀层\n• 符合 RoHS 环保标准\n• 无卤素\n• 晶体管 (TO)-220 塑料封装;

40-V N-Channel NexFET Power MOSFET

文件：353.4 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

40-V N-Channel NexFET Power MOSFET

文件：377.36 Kbytes Page：11 Pages

40-V N-Channel NexFET Power MOSFET

文件：377.36 Kbytes Page：11 Pages