Zero RecoveryRectifier

FEATURES · Zero Reverse Recovery · Zero Forward Recovery · Extremely Fast Switching · Positive Temperature Coefficient on VF APPLICATIONS · Motor Control · Power Factor Correction · Switch Mode Power Supplies

Zero RecoveryRectifier

FEATURES · Zero Reverse Recovery · Zero Forward Recovery · Extremely Fast Switching · Positive Temperature Coefficient on VF APPLICATIONS · Motor Control · Power Factor Correction · Switch Mode Power Supplies

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

Inductor for Digital AMP

Outline: ▪ 2-in-1structure offers space-saving. ▪ Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) ▪ Realized low distortion and high sound quality by using low loss material and Oxygen Free Copper(OFC)wire. Features： ▪ Core material:Mental composite

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

NPN SILICON PLANAR EPITAXIAL, HIGH SPEED,HIGH VOLTAGE SWITCHING TRANSISTOR Applications Suitable for Lighting, Switching Regulator and Motor Control

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package

CSD13202Q2 12-V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package 2 Applications • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for

CSD13202Q2 12-V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package 2 Applications • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for

CSD13202Q2 12-V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package 2 Applications • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for

CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

N-Channel NexFET™ Power MOSFET

1FEATURES • Ultra Low on Resistance • Ultra Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package APPLICATIONS • Battery Management • Load Switch • Battery Protection DESCRIPTION The device has

N-Channel NexFET™ Power MOSFET

1FEATURES • Ultra Low on Resistance • Ultra Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package APPLICATIONS • Battery Management • Load Switch • Battery Protection DESCRIPTION The device has

CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

CSD13383F4 12 V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f

CSD13383F4 12 V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f

CSD13383F4 12 V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f

CSD13383F4 12 V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f

CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN HIGH VOLTAGE SILICON POWER TRANSISTORS

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

NPN EPITAXIAL PLANAR SILICON TRANSISTOR Low Frequency Power Amplifier. Complementary CSB1058

CSD15380F3 20-V N-Channel FemtoFET™ MOSFET

1 Features • Ultra-low CiSS and COSS • Ultra-low Qg and Qgd • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimize

CSD15380F3 20-V N-Channel FemtoFET™ MOSFET

1 Features • Ultra-low CiSS and COSS • Ultra-low Qg and Qgd • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimize

CSD15380F3 20-V N-Channel FemtoFET™ MOSFET

1 Features • Ultra-low CiSS and COSS • Ultra-low Qg and Qgd • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimize

CSD15380F3 20-V N-Channel FemtoFET™ MOSFET

1 Features • Ultra-low CiSS and COSS • Ultra-low Qg and Qgd • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimize

20-V N-Channel NexFET™ Power MOSFETs

1FEATURES 2• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package APPLICATIONS • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for Contr

20-V N-Channel NexFET™ Power MOSFETs

1FEATURES 2• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package APPLICATIONS • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for Contr

20-V N-Channel NexFET™ Power MOSFETs

1FEATURES 2• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package APPLICATIONS • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for Contr

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application | « DC - DC Buck Converters Load switch « Power management » Motor Control « Portable Power Adaptors |

N-Channel NexFET™ Power MOSFET

1 Features • Optimized for 5 V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck in Networking, Telecom and Computing

N-Channel NexFET™ Power MOSFET

1 Features • Optimized for 5 V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck in Networking, Telecom and Computing

CSD16323Q3 N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in

CSD16323Q3 N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in

N-Channel NexFET Power MOSFETs

1 Features • Optimized for 5 V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck in Networking, Telecom and Computing