1 Features

• Ultra-low CiSS and COSS

• Ultra-low Qg and Qgd

• Ultra-small footprint

– 0.73 mm × 0.64 mm

• Ultra-low profile

– 0.36-mm max height

• Integrated ESD protection diode

– Rated > 4-kV HBM

– Rated > 2-kV CDM

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Battery applications

• Handheld and mobile applications

3 Description

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. Ultralow

capacitance improves switching speeds. When

used in data line applications, the low capacitance

minimizes noise coupling. This technology is capable

of replacing standard small signal MOSFETs while

providing a substantial reduction in footprint size.