Dual Enhancement Mode Field Effect Transistor(N and Channel)

FEATURES ■ 20V, 5A, RDS(ON) = 32mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. ■ -20V, -4A, RDS(ON) = 95mΩ @VGS = -4.5V. RDS(ON) = 125mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■ 20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ -20V, -4.3A, RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -10A, RDS(ON) = 18mΩ @VGS = -4.5V. RDS(ON) = 27mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -10A, RDS(ON) = 18mW @VGS = -4.5V. RDS(ON) = 27mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 9.0A, RDS(ON) = 20mW @VGS = 4.5V. RDS(ON) = 26mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Sw

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -8.9A, RDS(ON) = 20mW @VGS = -4.5V. RDS(ON) = 30mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 9.3A, RDS(ON) = 18mW @VGS = 4.5V. RDS(ON) = 24mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -7.2A, RDS(ON) = 30mΩ @VGS = -4.5V.                        RDS(ON) = 43mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -7.2A, RDS(ON) = 30mΩ @VGS = -4.5V. RDS(ON) = 43mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 8A, RDS(ON) = 20mW @VGS = 4.5V. FEATURES -30V, -7A, RDS(ON) = 26mW @VGS = -10V. RDS(ON) = 40mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 26mW @VGS = 2.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -6A, RDS(ON) = 44mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, -5.3A, RDS(ON) = 45mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ -20V, -4A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. ■ S

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 7.5A, FEATURES RDS(ON) = 25mW @VGS = 4.5V. - 2 0 V , - 4 A , RDS(ON) = 100mW @VGS = -4.5V. RDS(ON) = 150mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. RDS(O

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 33mΩ @VGS = 4.5V. ■ 20V, 6A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lea

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7.6A, RDS(ON) = 22mW @VGS = 10V. RDS(ON) = 33mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. 20V, 6A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 40mW @VGS = 2.5V.

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 20V, 6.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 90mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 20V, 6.5A, RDS(ON) = 30mW @VGS = 4.5V. RDS(ON) = 43mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 90mW @VGS = -2.5V. Lead-free plating ; R

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

Dual N-Channel Enhancement Mode Field Effect Transistor

P Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

文件：413.26 Kbytes Page：4 Pages

P-Channel Enhancement Mode Field Effect Transistor

文件：426.9 Kbytes Page：4 Pages

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：510.12 Kbytes Page：7 Pages

N-Channel and P-Channel MOSFET useadvanced trench Technology

文件：2.69568 Mbytes Page：9 Pages

包装：散装 描述：CEM2SLIM EVM 计算机设备 适配器卡

包装：散装 描述：CEM2SLIM EVM 计算机设备 适配器卡