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位置：首页 > IC中文资料第8602页 > CEM2

型号 功能描述 生产厂家&企业 LOGO 操作
CEM2005

Dual Enhancement Mode Field Effect Transistor(N and Channel)

FEATURES ■20V,5A,RDS(ON)=32mΩ@VGS=4.5V. RDS(ON)=43mΩ@VGS=2.5V. ■-20V,-4A,RDS(ON)=95mΩ@VGS=-4.5V. RDS(ON)=125mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2030A

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■20V,6A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■-20V,-4.3A,RDS(ON)=90mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2082

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,11A,RDS(ON)=12mΩ@VGS=4.5V. RDS(ON)=18mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2108

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,9.5A,RDS(ON)=14mΩ@VGS=4.5V. RDS(ON)=20mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-10A,RDS(ON)=18mΩ@VGS=-4.5V. RDS(ON)=27mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-10A,RDS(ON)=18mW@VGS=-4.5V. RDS(ON)=27mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM2152

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,9.0A,RDS(ON)=20mW@VGS=4.5V. RDS(ON)=26mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM2163

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-8.9A,RDS(ON)=20mΩ@VGS=-4.5V. RDS(ON)=30mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2163

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •BuiltinESDProtectionwithZenerDiode •TypicalESDPerformance:1800V •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PortableDevices -LoadSwitch -BatterySw

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CEM2163

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-8.9A,RDS(ON)=20mW@VGS=-4.5V. RDS(ON)=30mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM2182

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,9.3A,RDS(ON)=18mW@VGS=4.5V. RDS(ON)=24mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM2187

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-7.6A,RDS(ON)=22mΩ@VGS=-4.5V. RDS(ON)=32mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2281

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-7.2A,RDS(ON)=30mΩ@VGS=-4.5V. RDS(ON)=43mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM23189

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V,8A,RDS(ON)=20mW@VGS=4.5V. FEATURES -30V,-7A,RDS(ON)=26mW@VGS=-10V. RDS(ON)=40mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=26mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM2401

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-6A,RDS(ON)=44mΩ@VGS=-4.5V. RDS(ON)=65mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2401

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-6A,RDS(ON)=44mW@VGS=-4.5V. RDS(ON)=65mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM2407

P-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,-5.3A,RDS(ON)=45mW@VGS=-4.5V. RDS(ON)=65mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM2539A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■20V,7.5A,RDS(ON)=22mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■-20V,-4A,RDS(ON)=80mΩ@VGS=-10V. RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=150mΩ@VGS=-2.5V. ■S

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2539B

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V,7.5A, FEATURES RDS(ON)=25mW@VGS=4.5V. -20V,-4A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=150mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. RDS(O

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM26138

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,7.6A,RDS(ON)=22mΩ@VGS=10V. RDS(ON)=33mΩ@VGS=4.5V. ■20V,6A,RDS(ON)=27mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lea

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM26138

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,7.6A,RDS(ON)=22mW@VGS=10V. RDS(ON)=33mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. 20V,6A,RDS(ON)=27mW@VGS=4.5V. RDS(ON)=40mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM2939

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■20V,6.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=43mΩ@VGS=2.5V. ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=90mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2939

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 20V,6.5A,RDS(ON)=30mW@VGS=4.5V. RDS(ON)=43mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=90mW@VGS=-2.5V. Lead-freeplating;R

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEM2182

N-Channel Enhancement Mode Field Effect Transistor

文件：413.26 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2407

P-Channel Enhancement Mode Field Effect Transistor

文件：426.9 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2539

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：510.12 Kbytes Page：7 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEM2539

N-Channel and P-Channel MOSFET useadvanced trench Technology

文件：2.69568 Mbytes Page：9 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
CEM2SLIMSAS-EVM

包装：散装 描述：CEM2SLIM EVM 计算机设备 适配器卡

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2
CEM2SLIMSAS-EVM

包装：散装 描述：CEM2SLIM EVM 计算机设备 适配器卡

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2

CEM2产品属性

  • 类型

    描述

  • 型号

    CEM2

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    Dual N-Channel Enhancement Mode Field Effect Transistor

CEM2供应商更多...

更新时间：2025-8-2 10:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市中联芯电子有限公司
CEM2108
CET
23+
SOP8
10065
原装正品,有挂有货,假一赔十
询价
深圳市能元时代电子有限公司
CEM2108
VBsemi/台湾微碧
23+
SOP-8
12800
公司只有原装 欢迎来电咨询。
询价
深圳市鹏和科技有限公司
CEM2108
VBsemi
24+
SOP-8
5000
全现原装公司现货
询价
深圳市创新迹电子有限公司
CEM2030A
CET
22+
SOP-8
25000
只有原装原装,支持BOM配单
询价
深圳市河锋鑫科技有限公司
CEM2083
CET/華瑞
20+
SO-8
120000
只做原装 可免费提供样品
询价
深圳市南科功率半导体有限公司
CEM2083
NK/南科功率
2025+
SO-8
986966
国产
询价
深圳市威尔健半导体有限公司
CEM2030低压MOS管
VBSEMI/台湾微碧
23+
SOP-8
50000
全新原装正品现货,支持订货
询价
深圳市安富世纪电子有限公司
CEM2030A
SR
23+
SOP8
50000
全新原装正品现货,支持订货
询价
深圳市科芯源微电子有限公司
CEM2082
CET
25+
SOP8
30
原装正品,假一罚十!
询价
深圳诚思涵科技有限公司
CEM2082
TI
24+
SSOP
18766
公司现货库存,支持实单
询价

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