N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 9.3A, RDS(ON) = 18mW @VGS = 4.5V. RDS(ON) = 24mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

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N Channel MOSFET

SWITCH-MODE TRANSFORMER GUIDE

CONSUMER PRODUCTS Pulse offers a complete range of Switch-Mode Transformers in various technologies (slot, layer and triple insulation wire) used for power supplies in television, set-top boxes, satellite receivers, DVD players, telephone chargers, and white goods. Pulse also offers a new range o

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A-59551 b) Stranding Solid c) Diameter 0.010 2) Braid Data a) Nominal ID 1-1/2 (1.500) b) AWG of Ends 30 c) Number of Carriers 48 d) Nominal Percent Coverage 92 e) Total Number of Ends 576 f) Approx. Equiv. AWG

Snap Bushings

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14V .08A T1-3/4 Wire Terminal

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