Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

N Channel MOSFET

Fast Ethernet Cat5e Data Double-Ended Cordset

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male straight RJ45-coded black RJ45 Field Attachable, shielded, 30 V AC / 42 V DC, 1.5 A; TPE green cable, 4-wires, 0.38 mm²

Embedded USB to 1-Port RS-232 DB9 Serial Interface Adapter

Features • Compliant with RoHS and WEEE directives • High-speed UART with 128-byte Tx FIFO and 384-byte Rx FIFO • Data rates to 460.8K bps • All modem control signals implemented • Powered by USB connection • Sealevel software supports Windows 98SE/ME/2000/XP/Vista and Linux operating syste

Fieldbus, 50 Pr #18 Str TC, XLPO Ins, IS/OS, TPE Jkt, CMG

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High Current Toroid Inductors

文件：117.11 Kbytes Page：1 Pages

High Current Toroid Inductors

文件：111.85 Kbytes Page：1 Pages