Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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N-Channel and P-Channel MOSFET useadvanced trench Technology

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ -20V, -4A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. ■ S

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 7.5A, FEATURES RDS(ON) = 25mW @VGS = 4.5V. - 2 0 V , - 4 A , RDS(ON) = 100mW @VGS = -4.5V. RDS(ON) = 150mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. RDS(O

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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