P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -10A, RDS(ON) = 18mΩ @VGS = -4.5V. RDS(ON) = 27mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -10A, RDS(ON) = 18mW @VGS = -4.5V. RDS(ON) = 27mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

P Channel MOSFET

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