Dual Enhancement Mode Field Effect Transistor(N and Channel)

FEATURES ■ 20V, 5A, RDS(ON) = 32mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. ■ -20V, -4A, RDS(ON) = 95mΩ @VGS = -4.5V. RDS(ON) = 125mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

Dual Enhancement Mode Field Effect Transistor(N and Channel)

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

10 BASE T MAGNETICS ISOLATION MAGNETICS

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INSERT THRU-HOLE W/FLANGE

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5.0 Watt - 28 Volts, Class C Microwave 2000 MHz

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Its a complete tool kit that fits in your palm.

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