P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Sw

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -8.9A, RDS(ON) = 20mW @VGS = -4.5V. RDS(ON) = 30mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

P Channel MOSFET

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A-59551 b) Stranding Solid c) Diameter 0.005 2) Braid Data a) Nominal ID 5/64 (.078) b) AWG of Ends 36 c) Number of Carriers 24 d) Nominal Percent Coverage 88 e) Total Number of Ends 72 f) Approx. Equiv. AWG 18

Atten 50-Watt Soldering Iron - SA-50

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2.36mm Diameter Standard .093 Pin and Socket Plug Housing, 4 Circuits, Dual Row

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