P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-8.9A,RDS(ON)=20mΩ@VGS=-4.5V. RDS(ON)=30mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •BuiltinESDProtectionwithZenerDiode •TypicalESDPerformance:1800V •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PortableDevices -LoadSwitch -BatterySw

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-8.9A,RDS(ON)=20mW@VGS=-4.5V. RDS(ON)=30mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CustomerSpecification

Construction 1)Conductor a)MaterialTinnedCopper,perASTMB-33andCID-A-A-59551 b)StrandingSolid c)Diameter0.005 2)BraidData a)NominalID5/64(.078) b)AWGofEnds36 c)NumberofCarriers24 d)NominalPercentCoverage88 e)TotalNumberofEnds72 f)Approx.Equiv.AWG18

BandpassFilter

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SnapBushings

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2.36mmDiameterStandard.093PinandSocketPlugHousing,4Circuits,DualRow

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2.36mm(.093)DiameterStandard.093PinandSocketPlugHousing,4Circuits,DualRow

文件：162.57 Kbytes Page：3 Pages