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BF11晶体管资料
BF110别名：BF110三极管、BF110晶体管、BF110晶体三极管
BF110生产厂家：德国AEG公司_德国西门子AG公司_德国凡尔伏公司
BF110制作材料：Si-NPN
BF110性质：视频输出 （Vid）
BF110封装形式：直插封装
BF110极限工作电压：160V
BF110最大电流允许值：0.04A
BF110最大工作频率：150MHZ
BF110引脚数：3
BF110最大耗散功率：0.75W
BF110放大倍数：
BF110图片代号：C-40
BF110vtest：160
BF110htest：150000000
- BF110atest：0.04
BF110wtest：0.75
BF110代换 BF110用什么型号代替：BF257,BF258,BF259,BF336,BF657,BF658,BF659,2N5058,2N5059,3DA87C,
BF11价格
参考价格：￥0.3640
型号：BF1100 品牌：NXP/PHILIPS 备注：这里有BF11多少钱，2025年最近7天走势，今日出价，今日竞价，BF11批发/采购报价，BF11行情走势销售排行榜，BF11报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BF11 | Mounting flange 文件：368.06 Kbytes Page：1 Pages | PF 倍加福 |   | |
Dual-gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp | Philips 飞利浦 | | ||
Dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
Dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
Dual-gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp | Philips 飞利浦 | | ||
Dual-gate MOS-FET DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Special | Philips 飞利浦 | | ||
Dual-gate MOS-FET | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
Dual N-channel dual gate MOS-FET DESCRIPTION The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply volt | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packa | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packa | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packa | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel single gate MOS-FETs DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain p | Philips 飞利浦 | | ||
N-channel single gate MOSFET | ETC 知名厂家 | ETC | | |
N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low | VBSEMI 微碧半导体 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel single gate MOS-FETs DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain p | Philips 飞利浦 | | ||
Silicon RF switches DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca | Philips 飞利浦 | | ||
Silicon RF switches | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Silicon RF switches DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca | Philips 飞利浦 | | ||
Silicon RF switches | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
General Purpose Diodes General Purpose Diodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Electrical characterlitics General Purpose Diodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
2.0mm Pitch Pin Header Dual Row, Surface Mount 文件：116.1 Kbytes Page：1 Pages | GCT | | ||
Dual-gate MOS-FETs 文件：115.02 Kbytes Page：14 Pages | JMNIC 锦美电子 | | ||
Dual-gate MOS-FETs 文件：115.02 Kbytes Page：14 Pages | JMNIC 锦美电子 | | ||
封装/外壳：SOT-143R 包装：托盘 描述：MOSFET N-CH 14V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：SOT-143R 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 14V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
Dual-gate MOS-FET | ETC 知名厂家 | ETC | | |
Dual-gate MOS-FET 文件：106.65 Kbytes Page：14 Pages | JMNIC 锦美电子 | | ||
Dual-gate MOS-FET 文件：106.65 Kbytes Page：14 Pages | JMNIC 锦美电子 | | ||
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs 文件：141.15 Kbytes Page：16 Pages | JMNIC 锦美电子 | | ||
N-channel dual-gate MOS-FETs 文件：141.15 Kbytes Page：16 Pages | JMNIC 锦美电子 | | ||
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOSFET | ETC 知名厂家 | ETC | |
BF11产品属性
- 类型
描述
- 型号
BF11
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
Dual-gate MOS-FETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
标准封装 |
12048 |
全新原装正品/价格优惠/质量保障 |
|||
恩XP |
23+ |
SOT-143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
PHI |
25+ |
原装 |
32000 |
PHILIPS/飞利浦全新特价BF1100R即刻询购立享优惠#长期有货 |
|||
PHI |
25+ |
644 |
全新原装!优势库存热卖中! |
||||
恩XP |
25+ |
SOT143 |
15000 |
原装现货假一赔十 |
|||
恩XP |
16+ |
SOT-23 |
3000 |
进口原装现货/价格优势! |
|||
恩XP |
2019+ |
SOT363 |
36000 |
原盒原包装 可BOM配套 |
|||
恩XP |
1519+ |
NA |
3000 |
||||
恩XP |
24+ |
SOT143 |
89000 |
全新原装现货,假一罚十 |
|||
恩XP |
2025+ |
SOT343 |
5000 |
原装进口价格优 请找坤融电子! |
BF11芯片相关品牌
BF11规格书下载地址
BF11参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BF138
- BF137
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- BF134
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- BF132
- BF131
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- BF127
- BF125
- BF123
- BF121
- BF1201
- BF120
- BF119
- BF118
- BF117
- BF115
- BF114
- BF1118W
- BF1118R
- BF1118
- BF111
- BF1109R
- BF1109
- BF1108W
- BF1108R
- BF1108
- BF1107W
- BF1107
- BF1105R
- BF1105
- BF1102R
- BF1102
- BF1101R
- BF1101
- BF1100R
- BF1100
- BF110
- BF10S
- BF109
- BF108
- BF102M
- BF1012W
- BF1012S
- BF1012
- BF1009S
- BF1009
- BF1005W
- BF1005S
- BF1005R
- BF1005
- BF-1001
- BF1
- BF091M
- BEXXCB3
- BEXXCB1
- BEXXCA3
- BEXXCA1
- BEXXBB3
- BEXXBB1
- BEXXBA3
- BDY99
- BDY98
- BDY97
- BDY96
- BDY95
- BDY94
- BDY93
- BDY92
- BDY91
- BDY90
- BDY89
- BDY88
- BDY87
- BDY83(A,B,C)
- BDY82(A,B,C)
- BDY81(A,B,C)
- BDY80(A,B,C)
BF11数据表相关新闻
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JFET - 25 V 射频结栅场效应晶体管(RF JFET)晶体管 , SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET 射频结栅场效应晶体管(RF JFET)晶体管 , GaN SiC SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET N-Channel 射频结栅场效应晶体管(RF JFET)晶体管 , MESFET 射
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ROHM Semiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC / DC转换器
2020-6-9
DdatasheetPDF页码索引
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