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BF110晶体管资料
BF110别名：BF110三极管、BF110晶体管、BF110晶体三极管
BF110生产厂家：德国AEG公司_德国西门子AG公司_德国凡尔伏公司
BF110制作材料：Si-NPN
BF110性质：视频输出 （Vid）
BF110封装形式：直插封装
BF110极限工作电压：160V
BF110最大电流允许值：0.04A
BF110最大工作频率：150MHZ
BF110引脚数：3
BF110最大耗散功率：0.75W
BF110放大倍数：
BF110图片代号：C-40
BF110vtest：160
BF110htest：150000000
- BF110atest：0.04
BF110wtest：0.75
BF110代换 BF110用什么型号代替：BF257,BF258,BF259,BF336,BF657,BF658,BF659,2N5058,2N5059,3DA87C,
BF110价格
参考价格：￥0.3640
型号：BF1100 品牌：NXP/PHILIPS 备注：这里有BF110多少钱，2025年最近7天走势，今日出价，今日竞价，BF110批发/采购报价，BF110行情走势销售排行榜，BF110报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BF110 | 2.0mm Pitch Pin Header Dual Row, Surface Mount 文件：116.1 Kbytes Page：1 Pages | GCT Global Connector Technology |  |   |
Dual-gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
Dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
Dual-gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Dual-gate MOS-FET DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Special | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Dual-gate MOS-FET | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Dual N-channel dual gate MOS-FET DESCRIPTION The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply volt | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packa | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packa | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packa | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-channel single gate MOS-FETs DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain p | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel single gate MOSFET | ETC 知名厂家 | ETC | | |
N-channel single gate MOS-FETs DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain p | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Silicon RF switches DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Silicon RF switches | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Silicon RF switches | ETC 知名厂家 | ETC | | |
Silicon RF switches DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Dual-gate MOS-FETs 文件：115.02 Kbytes Page：14 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 |  | | |
Dual-gate MOS-FETs 文件：115.02 Kbytes Page：14 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
封装/外壳：SOT-143R 包装：托盘 描述：MOSFET N-CH 14V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：SOT-143R 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 14V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
Dual-gate MOS-FET 文件：106.65 Kbytes Page：14 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
Dual-gate MOS-FET 文件：106.65 Kbytes Page：14 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs 文件：141.15 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
N-channel dual-gate MOS-FETs 文件：141.15 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOS-FETs 文件：133.68 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
Dual N-channel dual gate MOS-FETs 文件：133.68 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
DC Blower Fan 110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. 奇凌电子东莞市奇凌电子科技有限公司 |  | | |
DC Blower Fan 110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. 奇凌电子东莞市奇凌电子科技有限公司 | | | |
DC Blower Fan 110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. 奇凌电子东莞市奇凌电子科技有限公司 | | | |
DC Blower Fan 110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. 奇凌电子东莞市奇凌电子科技有限公司 | | | |
DC Blower Fan 110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. 奇凌电子东莞市奇凌电子科技有限公司 | | | |
DC Blower Fan 110x110x25mm 文件：357.99 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. 奇凌电子东莞市奇凌电子科技有限公司 | | |
BF110产品属性
- 类型
描述
- 型号
BF110
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
Dual-gate MOS-FETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
5740 |
原装现货,当天可交货,原型号开票 |
|||
恩XP |
24+ |
标准封装 |
12048 |
全新原装正品/价格优惠/质量保障 |
|||
PHI |
25+ |
原装 |
32000 |
PHILIPS/飞利浦全新特价BF1100R即刻询购立享优惠#长期有货 |
|||
INFION |
2016+ |
SOT143 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
PHI |
24+ |
SOT-143 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
23+ |
SOT-143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
PHI |
22+ |
43944 |
100000 |
代理渠道/只做原装/可含税 |
|||
恩XP |
2511 |
N/A |
6000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
恩XP |
12+ |
SOT-143 |
946 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PHI |
1942+ |
SOT-143 |
9852 |
只做原装正品现货或订货!假一赔十! |
BF110芯片相关品牌
BF110规格书下载地址
BF110参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BF140
- BF138
- BF137
- BF136
- BF134
- BF133
- BF132
- BF131
- BF130
- BF127
- BF125
- BF123
- BF121
- BF1201
- BF120
- BF119
- BF118
- BF117
- BF115
- BF114
- BF1118W
- BF1118R
- BF1118
- BF111
- BF1109R
- BF1109
- BF1108W
- BF1108R
- BF1108
- BF1107W
- BF1107
- BF1105R
- BF1105
- BF1102R
- BF1102
- BF1101R
- BF1101
- BF1100R
- BF1100
- BF10S
- BF109
- BF108
- BF102M
- BF1012W
- BF1012S
- BF1012
- BF1009S
- BF1009
- BF1005W
- BF1005S
- BF1005R
- BF1005
- BF-1001
- BF1
- BF091M
- BEXXCB3
- BEXXCB1
- BEXXCA3
- BEXXCA1
- BEXXBB3
- BEXXBB1
- BEXXBA3
- BDY99
- BDY98
- BDY97
- BDY96
- BDY95
- BDY94
- BDY93
- BDY92
- BDY91
- BDY90
- BDY89
- BDY88
- BDY87
- BDY83(A,B,C)
- BDY82(A,B,C)
- BDY81(A,B,C)
- BDY80(A,B,C)
BF110数据表相关新闻
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进口代理
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BE-A301
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JFET - 25 V 射频结栅场效应晶体管(RF JFET)晶体管 , SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET 射频结栅场效应晶体管(RF JFET)晶体管 , GaN SiC SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET N-Channel 射频结栅场效应晶体管(RF JFET)晶体管 , MESFET 射
2020-8-5BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
ROHM Semiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC / DC转换器
2020-6-9
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