DESCRIPTION

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES

• Short channel transistor with high

forward transfer admittance to input

capacitance ratio

• Low noise gain controlled amplifier

up to 1 GHz

• Partly internal self-biasing circuit to

ensure good cross-modulation

performance during AGC and good

DC stabilization.

APPLICATIONS

• VHF and UHF applications with

3 to 7 V supply voltage, such as

television tuners and professional

communications equipment.