N-channel single gate MOS-FETs

DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain p

N-channel single gate MOSFET

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

RF Manual 16th edition

N-channel single gate MOS-FETs

DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain p

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：MOSFET N-CH 3V 10MA SOT23 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：MOSFET N-CH 3V 10MA SOT23 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel single gate MOS-FETs

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N-channel single gate MOS-FETs

文件：66.4 Kbytes Page：8 Pages

Miniature, 10W DIP Single & Dual Output DC/DC Converters

文件：171.29 Kbytes Page：2 Pages

BUCK_BOOST & BOOST PWM CONTROLLER WITH ADJUSTABLE LDO

文件：396.47 Kbytes Page：16 Pages

Advanced Programmable Clock

文件：58.95 Kbytes Page：4 Pages

Advanced Programmable Clock

文件：58.95 Kbytes Page：4 Pages

Switching Diode Array

文件：527.61 Kbytes Page：1 Pages