DESCRIPTION

Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES

• Specially designed for use at 9 to 12 V supply voltage

• Short channel transistor with high forward transfer

admittance to input capacitance ratio

• Low noise gain controlled amplifier up to 1 GHz

• Superior cross-modulation performance during AGC.

APPLICATIONS

• VHF and UHF applications such as television tuners and

professional communications equipment.