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BD8晶体管资料

BD800别名：BD800三极管、BD800晶体管、BD800晶体三极管
BD800生产厂家：美国摩托罗拉半导体公司
BD800制作材料：Si-PNP
BD800性质：低频或音频放大（LF）_功率放大（L）
BD800封装形式：直插封装
BD800极限工作电压：80V
BD800最大电流允许值：8A
BD800最大工作频率：<1MHZ或未知
BD800引脚数：3
BD800最大耗散功率：65W
BD800放大倍数：
BD800图片代号：B-10
BD800vtest：80
BD800htest：999900
BD800atest：8
BD800wtest：65

BD800代换 BD800用什么型号代替：BD544B,BD710,3CK010D,

BD8价格

参考价格：￥2.4595

型号：BD809G 品牌：ON 备注：这里有BD8多少钱，2024年最近7天走势，今日出价，今日竞价，BD8批发/采购报价，BD8行情走势销售排行榜，BD8报价。

型号	功能描述	生产厂家&企业
BD8	包装：散装描述：CUTTER OVAL FLSH SET STOP 工具钢丝钳	SwanstromSwanstrom Tools USA SwanstromSwanstrom Tools USA
BD800	EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base,SiliconN-P-NandP-N-PVERSAWATTTransistors	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
BD800	isc Silicon PNP Power Transistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-80V(Min) •LowSaturationVoltage •ComplementtoTypeBD799 APPLICATIONS •Designedforawidevarietyofmedium-powerswitchingandamplifierapplications,suchasseriesandshuntregulatorsanddriverandoutputstagesof	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
BD800	Silicon PNP Power Transistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-80V(Min) •LowSaturationVoltage •ComplementtoTypeBD799 APPLICATIONS •Designedforawidevarietyofmedium-powerswitchingandamplifierapplications,suchasseriesandshuntregulatorsanddriverandoutputstagesof	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
BD800M5WFP2-C	For Automotive 500 mA Adjustable Output LDO Regulators GeneralDescription TheBD800M5Wxxx-Cseriesarelinearregulators designedaslowcurrentconsumptionproductsforpower suppliesinvariousautomotiveapplications. Theseproductsaredesignedforupto45Vasanabsolute maximumvoltageandtooperateuntil500mAforthe outputcurrent	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD800M5WFPJ-C	For Automotive 500 mA Adjustable Output LDO Regulators GeneralDescription TheBD800M5Wxxx-Cseriesarelinearregulators designedaslowcurrentconsumptionproductsforpower suppliesinvariousautomotiveapplications. Theseproductsaredesignedforupto45Vasanabsolute maximumvoltageandtooperateuntil500mAforthe outputcurrent	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD800M5WHFP-C	For Automotive 500 mA Adjustable Output LDO Regulators GeneralDescription TheBD800M5Wxxx-Cseriesarelinearregulators designedaslowcurrentconsumptionproductsforpower suppliesinvariousautomotiveapplications. Theseproductsaredesignedforupto45Vasanabsolute maximumvoltageandtooperateuntil500mAforthe outputcurrent	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD801	Plastic High Power Silicon NPN Transistor PlasticHighPowerSiliconPNPTransistor ...designedforuseupto30Wattaudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=1.0Adc •BD801iscomplementarywithBD798,800,802	MotorolaMotorola, Inc 摩托罗拉
BD801	EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base,SiliconN-P-NandP-N-PVERSAWATTTransistors	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
BD802	Plastic High Power Silicon PNP Transistor PlasticHighPowerSiliconPNPTransistor ...designedforuseupto30Wattaudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=1.0Adc •BD802iscomplementarywithBD795,797,799,801	MotorolaMotorola, Inc 摩托罗拉
BD802	EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base,SiliconN-P-NandP-N-PVERSAWATTTransistors	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
BD802	isc Silicon PNP Power Transistor DESCRIPTION •Collector-EmitterSustainingVoltage- :VCEO(SUS)=-100V(Min) •LowSaturationVoltage •ComplementtoTypeBD801 APPLICATIONS •Designedforawidevarietyofmedium-powerswitchingand amplifierapplications,suchasseriesandshuntregulators anddriverandout	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
BD802	Plastic High Power Silicon PNP Transistor PlasticHighPowerSiliconPNPTransistor ...designedforuseupto30Wattaudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain— hFE=40(Min)@IC=1.0Adc •BD802iscomplementarywithBD795,797,799,801	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BD802	Silicon PNP Power Transistor DESCRIPTION •Collector-EmitterSustainingVoltage- :VCEO(SUS)=-100V(Min) •LowSaturationVoltage •ComplementtoTypeBD801 APPLICATIONS •Designedforawidevarietyofmedium-powerswitchingand amplifierapplications,suchasseriesandshuntregulators anddriverandout	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
BD807	isc Silicon NPN Power Transistor DESCRIPTION ·DCCurrentGain-:hFE=30(Min.)@IC=2A ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min) ·ComplementtoTypeBD808 APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
BD808	Plastic High Power Silicon PNP Transistor PlasticHighPowerSiliconPNPTransistor ...designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=30(Min)@IC=2.0Adc •BD808,810arecomplementarywithBD807,890	MotorolaMotorola, Inc 摩托罗拉
BD808	isc Silicon PNP Power Transistor DESCRIPTION •DCCurrentGain-:hFE=30@IC=-2A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min) •ComplementtoTypeBD807 APPLICATIONS •Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
BD808	Plastic High Power Silicon PNP Transistor PlasticHighPowerSiliconPNPTransistor ...designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=30(Min)@IC=2.0Adc •BD808,810arecomplementarywithBD807,890	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BD808	Silicon PNP Power Transistor DESCRIPTION •DCCurrentGain-:hFE=30@lc=-2A •Collector-EmitterSustainingVoltage-:VCEo(sus)=-60V(Min) •ComplementtoTypeBD807 APPLICATIONS •Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
BD809	POWER TRANSISTORS PNP SILICON PlasticHighPowerSiliconTransistor Thesedevicesaredesignedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain-hFE=30(Min)@IC=2.0Adc •Pb-FreePackagesareAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BD809	Silicon NPN Power Transistors DESCRIPTION ··WithTO-220Cpackage ·ComplementtotypeBD810 ·DCcurrentgain :hFE=30(Min)@IC=2.0Adc APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.	SAVANTIC Savantic, Inc.
BD809	Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD810 ·DCcurrentgain :hFE=30(Min)@IC=2.0Adc APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
BD809	Silicon NPN Power Transistor DESCRIPTION •DCCurrentGain- :hFE=30@lc=2A •Collector-EmitterSustainingVoltage- :VCEO(sus)=80V(Min) •ComplementtoTypeBD810 APPLICATIONS •Designedforuseinhighpoweraudioamplifiersutilizing complementaryorquasicomplementarycircuits.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
BD80C0A	35V Withstand Voltage 1A LDO Regulators ●Description TheBDxxFC0seriesarelow-saturationregulators.The series’outputvoltagesareVariable,3.0V,3.3V,5.0V,6.0V, 7.0V,8.0V,9.0V,10.0V,12.0Vand15.0Vandpackages areHTSOP-J8,TO252-3,andTO252-5.Thisserieshasa built-inover-currentprotectioncircuitthatpreventst	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80C0AW	35V Withstand Voltage 1A LDO Regulators ●Description TheBDxxFC0seriesarelow-saturationregulators.The series’outputvoltagesareVariable,3.0V,3.3V,5.0V,6.0V, 7.0V,8.0V,9.0V,10.0V,12.0Vand15.0Vandpackages areHTSOP-J8,TO252-3,andTO252-5.Thisserieshasa built-inover-currentprotectioncircuitthatpreventst	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80FC0	35V Withstand Voltage 1A LDO Regulators ●Description TheBDxxFC0seriesarelow-saturationregulators.The series’outputvoltagesareVariable,3.0V,3.3V,5.0V,6.0V, 7.0V,8.0V,9.0V,10.0V,12.0Vand15.0Vandpackages areHTSOP-J8,TO252-3,andTO252-5.Thisserieshasa built-inover-currentprotectioncircuitthatpreventst	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80FC0WEFJ-E2	35V Withstand Voltage 1A LDO Regulators ●Description TheBDxxFC0seriesarelow-saturationregulators.The series’outputvoltagesareVariable,3.0V,3.3V,5.0V,6.0V, 7.0V,8.0V,9.0V,10.0V,12.0Vand15.0Vandpackages areHTSOP-J8,TO252-3,andTO252-5.Thisserieshasa built-inover-currentprotectioncircuitthatpreventst	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80FC0WFP-E2	35V Withstand Voltage 1A LDO Regulators ●Description TheBDxxFC0seriesarelow-saturationregulators.The series’outputvoltagesareVariable,3.0V,3.3V,5.0V,6.0V, 7.0V,8.0V,9.0V,10.0V,12.0Vand15.0Vandpackages areHTSOP-J8,TO252-3,andTO252-5.Thisserieshasa built-inover-currentprotectioncircuitthatpreventst	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80FD0WFP2-E2	35V Voltage Resistance 2A LDO Regulators Description TheBDxxFD0seriesarelow-saturationregulators.The series’outputvoltagesareVariable,andfixedtype. Theseserieshaveabuilt-inover-currentprotection circuitthatpreventsthedestructionoftheICdueto outputshortcircuitsandathermalshutdowncircuitthat protec	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80FD0WHFP-TR	35V Voltage Resistance 2A LDO Regulators Description TheBDxxFD0seriesarelow-saturationregulators.The series’outputvoltagesareVariable,andfixedtype. Theseserieshaveabuilt-inover-currentprotection circuitthatpreventsthedestructionoftheICdueto outputshortcircuitsandathermalshutdowncircuitthat protec	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA3MEFJ-ME2	Automotive 300mA Variable Output LDO Regulator ●Features ◼Highaccuracyreferencevoltagecircuit ◼Built-inOverCurrentProtectioncircuit(OCP) ◼Built-inThermalShutDowncircuit(TSD) ◼Withshutdownswitch ◼AEC-Q100Qualified	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA3VEFJ-ME2	Automotive 300mA Variable Output LDO Regulator ●Features ◼Highaccuracyreferencevoltagecircuit ◼Built-inOverCurrentProtectioncircuit(OCP) ◼Built-inThermalShutDowncircuit(TSD) ◼Withshutdownswitch ◼AEC-Q100Qualified	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA3WEFJ	300mA Variable / Fixed Output LDO Regulators ●GeneralDescription BDxxGA3WEFJ/BDxxGA3WNUXseriesdevicesareLDOregulatorswithanoutputcurrentof300mA.Theoutput accuracyis±1oftheoutputvoltage.Bothfixedandvariableoutputvoltagedevicesareavailable.Theoutputvoltageof thevariableoutputvoltagedevicecanbevaried	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA3WEFJ-E2	300mA Variable / Fixed Output LDO Regulators ●GeneralDescription BDxxGA3WEFJ/BDxxGA3WNUXseriesdevicesareLDOregulatorswithanoutputcurrentof300mA.Theoutput accuracyis±1oftheoutputvoltage.Bothfixedandvariableoutputvoltagedevicesareavailable.Theoutputvoltageof thevariableoutputvoltagedevicecanbevaried	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA3WNUX	300mA Variable / Fixed Output LDO Regulators ●GeneralDescription BDxxGA3WEFJ/BDxxGA3WNUXseriesdevicesareLDOregulatorswithanoutputcurrentof300mA.Theoutput accuracyis±1oftheoutputvoltage.Bothfixedandvariableoutputvoltagedevicesareavailable.Theoutputvoltageof thevariableoutputvoltagedevicecanbevaried	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA3WNUX-TR	300mA Variable / Fixed Output LDO Regulators ●GeneralDescription BDxxGA3WEFJ/BDxxGA3WNUXseriesdevicesareLDOregulatorswithanoutputcurrentof300mA.Theoutput accuracyis±1oftheoutputvoltage.Bothfixedandvariableoutputvoltagedevicesareavailable.Theoutputvoltageof thevariableoutputvoltagedevicecanbevaried	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA5MEFJ-ME2	Automotive 0.5A Variable Output LDO Regulator ●Features ◼Highaccuracyreferencevoltagecircuit ◼Built-inOverCurrentProtectioncircuit(OCP) ◼Built-inThermalShutDowncircuit(TSD) ◼Withshutdownswitch ◼AEC-Q100Qualified	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA5VEFJ-ME2	Automotive 0.5A Variable Output LDO Regulator ●Features ◼Highaccuracyreferencevoltagecircuit ◼Built-inOverCurrentProtectioncircuit(OCP) ◼Built-inThermalShutDowncircuit(TSD) ◼Withshutdownswitch ◼AEC-Q100Qualified	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA5WEFJ	500mA Variable / Fixed Output LDO Regulators ●GeneralDescription BDxxGA5WEFJseriesdevicesareLDOregulatorswithanoutputcurrentof0.5A.Theoutputaccuracyis±1oftheoutput voltage.Bothfixedandvariableoutputvoltagedevicesareavailable.Theoutputvoltageofthevariableoutputvoltage devicecanbevariedfrom1.5to13	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GA5WEFJ-E2	500mA Variable / Fixed Output LDO Regulators ●GeneralDescription BDxxGA5WEFJseriesdevicesareLDOregulatorswithanoutputcurrentof0.5A.Theoutputaccuracyis±1oftheoutput voltage.Bothfixedandvariableoutputvoltagedevicesareavailable.Theoutputvoltageofthevariableoutputvoltage devicecanbevariedfrom1.5to13	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GC0MEFJ-ME2	Automotive 1.0A Variable Output LDO Regulator ●Features ◼Highaccuracyreferencevoltagecircuit ◼Built-inOverCurrentProtectioncircuit(OCP) ◼Built-inThermalShutDowncircuit(TSD) ◼Withshutdownswitch ◼AEC-Q100Qualified	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD80GC0VEFJ-ME2	Automotive 1.0A Variable Output LDO Regulator ●Features ◼Highaccuracyreferencevoltagecircuit ◼Built-inOverCurrentProtectioncircuit(OCP) ◼Built-inThermalShutDowncircuit(TSD) ◼Withshutdownswitch ◼AEC-Q100Qualified	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD810	POWER TRANSISTORS PNP SILICON PlasticHighPowerSiliconTransistor Thesedevicesaredesignedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain-hFE=30(Min)@IC=2.0Adc •Pb-FreePackagesareAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BD810	Silicon PNP Power Transistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD809 ·DCcurrentgain :hFE=30(Min)@IC=2.0Adc APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.	SAVANTIC Savantic, Inc.
BD810	Silicon PNP Transistors ♦Features •Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. •WithTO-220package	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司
BD810	Silicon PNP Power Transistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD809 ·DCcurrentgain :hFE=30(Min)@IC=2.0Adc APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
BD8100CS	DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8100CT	THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8100S	DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8100T	THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8100YS	DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8100YT	THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8105FV	A serial control LED driver for car PowerManagementICSeriesforAutomotiveBodyControl(LEDDriver) ●Description TheBD8105FVisaserialparallelcontrolLEDdriverwith35Vinputvoltagerating. Respondingtothe3-lineserialdata,itturnsthe12chopendrainoutputon/off. Duetoitscompactsize,itisoptimal	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD8150CS	DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8150CT	THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8150KVT	Main Power Supply For TFT-LCD Display Module Description TheBD8150KVTisasystempowersupplyICthatoffersa4-channelpowersupplywith10gammacorrectionoutputchannelsandVCOM.TheDC/DCblockcanbeswitchedbetweenstep-upandstep-downandsupportsboth5Vand12Vinput. Features 1)Multi-channelpowersupplywithtwoDC/DCc	ROHMRohm Semiconductor 罗姆罗姆半导体集团
BD8150S	DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8150T	THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8150YS	DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司
BD8150YT	THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity	PANJITPANJIT International Inc. 强茂強茂股份有限公司

BD8产品属性

类型
描述
型号
BD8
制造商
Harris Corporation

BD8供应商更多...

更新时间：2024-6-16 23:15:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市富利微电子科技有限公司	BD8811FV	ROHM/罗姆	23+	SOP	30000	房间原装现货特价热卖,有单详谈	询价
深圳市高捷芯城科技有限公司	BD810G	onsemi(安森美)	23+	TO-220	942	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市杰顺创科技有限公司	BD8379EFV-ME2	ROHM/罗姆	21+	TSSOP20	16628	全新原装现货热卖	询价
深圳市得捷芯城科技有限公司	BD82HM65SLJ4P	INTEL(英特尔)	23+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市科芯源微电子有限公司	BD83854GWL-E2	ROHM/罗姆	24+	BGA	58000	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市纳艾斯科技有限公司	BD87A34FVM-TR	ROHM/罗姆	2020+	NA	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市天芯威科技有限公司	BD86120EFJ-E2	ROHM/罗姆	22+	SOP8	30000	原装正品	询价
深圳市金芯世纪电子有限公司	BD82024FVJ-E2	ROHM/罗姆	22+	MSOP8	100000	代理渠道/只做原装/可含税	询价
深圳市华睿芯科技有限公司	BD8152FVM-TR	ROHM	23+	MSOP8	20000	原厂原装正品现货	询价
深圳市弘扬芯城科技有限公司	BD800	SPTECH(深圳质超)	23+	TO220C	6000	诚信服务，绝对原装原盘	询价

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