isc Silicon NPN Power Transistor

DESCRIPTION ·DC Current Gain -: hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min) ·Complement to Type BD808 APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Silicon NPN Power Transistor

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Trans GP BJT NPN 60V 10A

Audio Broadcast Quality 800A Series

Features Deep-drawn steel case with tin plated finish, with two convenient 6-32 mounting studs with hardware. Includes wire leads (minimum length of 4). Frequency response +/- 0.5 db max. from 50 Hz. to 15 Khz. Insertion loss of apx. 1 db. Maximum power level +15 dbm. (except 841A, 842A & 84

807 Series High Temp Card Edge Connector | Green | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator

Features 0.156 (3.96mm) Contact Spacing by 0.200 (5.08mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, 0.473 (12.01mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configuratio

Fiber Optic Receiver with Quantizer and Clock Recovery and Data Retiming

PRODUCT DESCRIPTION The AD807 provides the receiver functions of data quantization, signal level detect, clock recovery and data retiming for 155 Mbps NRZ data. The device, together with a PIN diode/preamplifier combination, can be used for a highly integrated, low cost, low power SONET OC-3 or S

Surface Mount Back Boxes

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Low Cost, 8W DIP Wide Input Range DC/DC Converters

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