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BD809晶体管资料

  • BD809别名:BD809三极管、BD809晶体管、BD809晶体三极管

  • BD809生产厂家:美国摩托罗拉半导体公司

  • BD809制作材料:Si-NPN

  • BD809性质:低频或音频放大 (LF)_功率放大 (L)

  • BD809封装形式:直插封装

  • BD809极限工作电压:80V

  • BD809最大电流允许值:10A

  • BD809最大工作频率:<1MHZ或未知

  • BD809引脚数:3

  • BD809最大耗散功率:90W

  • BD809放大倍数

  • BD809图片代号:B-10

  • BD809vtest:80

  • BD809htest:999900

  • BD809atest:10

  • BD809wtest:90

  • BD809代换 BD809用什么型号代替:BD545C,BD709,3DD164B,

BD809价格

参考价格:¥2.4595

型号:BD809G 品牌:ON 备注:这里有BD809多少钱,2026年最近7天走势,今日出价,今日竞价,BD809批发/采购报价,BD809行情走势销售排行榜,BD809报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BD809

POWER TRANSISTORS PNP SILICON

Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc • Pb-Free Packages are Available*

ONSEMI

安森美半导体

BD809

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD810 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

ISC

无锡固电

BD809

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain - : hFE=30@lc=2A • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 80V(Min) • Complement to Type BD810 APPLICATIONS • Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD809

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220C package ·Complement to type BD810 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

SAVANTIC

BD809

High Power NPN Bipolar Transistor

The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc\n• Pb-Free Packages are Available\n;

ONSEMI

安森美半导体

BD809

Plastic High Power Silicon Transistors

文件:95 Kbytes Page:4 Pages

ONSEMI

安森美半导体

BD809

Plastic High Power Silicon Transistor

文件:86.03 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Plastic High Power Silicon Transistor

文件:86.03 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Plastic High Power Silicon Transistors

文件:95 Kbytes Page:4 Pages

ONSEMI

安森美半导体

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Plastic High Power Silicon Transistor

文件:86.03 Kbytes Page:5 Pages

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • A Mini Mold Package Adopted • Built-in 2 Transistors (

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • A Mini Mold Package Adopted • Built-in 2 Transistors (

NEC

瑞萨

BD809产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    NPN

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    1.1

  • IC Cont. (A):

    10

  • VCEO Min (V):

    80

  • VCBO (V):

    80

  • VEBO (V):

    5

  • VBE(on) (V):

    1.6

  • hFE Min:

    30

  • fT Min (MHz):

    1.5

  • PTM Max (W):

    90

  • Package Type:

    TO-220-3

更新时间:2026-5-14 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
23+
TO-220
80660
原厂授权代理,海外优势订货渠道。可提供大量库存,详
三年内
1983
只做原装正品
26+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
AP
23+
SO-8
69820
终端可以免费供样,支持BOM配单!
ON/安森美
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
23+
2013+
7300
专注配单,只做原装进口现货
onsemi(安森美)
25+
TO-220
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi(安森美)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
24+
TO-220
10000
全新
ONSemiconductor
24+
NA
3000
进口原装正品优势供应

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