BD809晶体管资料
BD809别名:BD809三极管、BD809晶体管、BD809晶体三极管
BD809生产厂家:美国摩托罗拉半导体公司
BD809制作材料:Si-NPN
BD809性质:低频或音频放大 (LF)_功率放大 (L)
BD809封装形式:直插封装
BD809极限工作电压:80V
BD809最大电流允许值:10A
BD809最大工作频率:<1MHZ或未知
BD809引脚数:3
BD809最大耗散功率:90W
BD809放大倍数:
BD809图片代号:B-10
BD809vtest:80
BD809htest:999900
- BD809atest:10
BD809wtest:90
BD809代换 BD809用什么型号代替:BD545C,BD709,3DD164B,
BD809价格
参考价格:¥2.4595
型号:BD809G 品牌:ON 备注:这里有BD809多少钱,2026年最近7天走势,今日出价,今日竞价,BD809批发/采购报价,BD809行情走势销售排行榜,BD809报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD809 | POWER TRANSISTORS PNP SILICON Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc • Pb-Free Packages are Available* | ONSEMI 安森美半导体 | ||
BD809 | Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD810 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. | ISC 无锡固电 | ||
BD809 | Silicon NPN Power Transistor DESCRIPTION • DC Current Gain - : hFE=30@lc=2A • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 80V(Min) • Complement to Type BD810 APPLICATIONS • Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
BD809 | Silicon NPN Power Transistors DESCRIPTION ··With TO-220C package ·Complement to type BD810 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. | SAVANTIC | ||
BD809 | High Power NPN Bipolar Transistor The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc\n• Pb-Free Packages are Available\n; | ONSEMI 安森美半导体 | ||
BD809 | Plastic High Power Silicon Transistors 文件:95 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | ||
BD809 | Plastic High Power Silicon Transistor 文件:86.03 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | ||
Plastic High Power Silicon Transistor 文件:86.03 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Plastic High Power Silicon Transistors 文件:95 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Plastic High Power Silicon Transistor 文件:86.03 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
3-Pin Microprocessor Reset Monitors The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre | ONSEMI 安森美半导体 | |||
3-Pin Microprocessor Reset Monitors The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre | ONSEMI 安森美半导体 | |||
3-Pin Microprocessor Reset Monitors The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre | ONSEMI 安森美半导体 | |||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • A Mini Mold Package Adopted • Built-in 2 Transistors ( | NEC 瑞萨 | |||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • A Mini Mold Package Adopted • Built-in 2 Transistors ( | NEC 瑞萨 |
BD809产品属性
- 类型
描述
- Pb-free:
Pb
- Status:
Active
- Polarity:
NPN
- Type:
General Purpose
- VCE(sat) Max (V):
1.1
- IC Cont. (A):
10
- VCEO Min (V):
80
- VCBO (V):
80
- VEBO (V):
5
- VBE(on) (V):
1.6
- hFE Min:
30
- fT Min (MHz):
1.5
- PTM Max (W):
90
- Package Type:
TO-220-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
TO-220 |
80660 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
26+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
AP |
23+ |
SO-8 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
ON/安森美 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
23+ |
2013+ |
7300 |
专注配单,只做原装进口现货 |
||||
onsemi(安森美) |
25+ |
TO-220 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
24+ |
TO-220 |
10000 |
全新 |
||||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
BD809芯片相关品牌
BD809规格书下载地址
BD809参数引脚图相关
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BD809数据表相关新闻
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DdatasheetPDF页码索引
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