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BD810晶体管资料

  • BD810别名：BD810三极管、BD810晶体管、BD810晶体三极管

  • BD810生产厂家：美国摩托罗拉半导体公司

  • BD810制作材料：Si-PNP

  • BD810性质：低频或音频放大 （LF）_功率放大 （L）

  • BD810封装形式：直插封装

  • BD810极限工作电压：80V

  • BD810最大电流允许值：10A

  • BD810最大工作频率：<1MHZ或未知

  • BD810引脚数：3

  • BD810最大耗散功率：90W

  • BD810放大倍数：

  • BD810图片代号：B-10

  • BD810vtest：80

  • BD810htest：999900

  • BD810atest：10

  • BD810wtest：90

  • BD810代换 BD810用什么型号代替：BD546C,BD710,3CK100D,

BD810价格

参考价格：￥14.4802

型号：BD8105FV-E2 品牌：Rohm 备注：这里有BD810多少钱，2026年最近7天走势，今日出价，今日竞价，BD810批发/采购报价，BD810行情走势销售排行榜，BD810报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BD810

POWER TRANSISTORS PNP SILICON

Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc • Pb-Free Packages are Available*

ONSEMI

安森美半导体

BD810

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD809 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

ISC

无锡固电

BD810

Silicon PNP Transistors

♦ Features • Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • With TO-220 package

JMNIC

锦美电子

BD810

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type BD809 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

SAVANTIC

BD810

High Power PNP BipolarTransistor

The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

BD810

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS PNP 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

BD810

Silicon PNP Power Transistor

文件：127.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD810

Plastic High Power Silicon Transistor

文件：86.03 Kbytes Page：5 Pages

ONSEMI

安森美半导体

BD8100CS

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

PANJIT

強茂

BD8100CT

THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

PANJIT

強茂

BD8100S

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

PANJIT

強茂

BD8100T

THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

PANJIT

強茂

BD8100YS

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

PANJIT

強茂

BD8100YT

THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

PANJIT

強茂

BD8105FV

A serial control LED driver for car

Power Management IC Series for Automotive Body Control(LED Driver) ●Description The BD8105FV is a serial parallel control LED driver with 35V input voltage rating. Responding to the 3-line serial data, it turns the 12ch open drain output on/off. Due to its compact size, it is optimal

ROHM

罗姆

BD810_15

Silicon PNP Transistors

文件：127.28 Kbytes Page：1 Pages

JMNIC

锦美电子

BD810_2015

Silicon PNP Transistors

文件：127.28 Kbytes Page：1 Pages

JMNIC

锦美电子

BD8100CS

8.0 A SCHOTTKY BARRIER DIODE

文件：146.79 Kbytes Page：2 Pages

ZSELEC

淄博圣诺

BD8100CS_S2_00001

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SURFACE MOUNT SCHOTTKY BARRIER R 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

BD8100CT

Power Schottky

PANJIT

強茂

BD8100CT

8.0 A SCHOTTKY BARRIER DIODE

文件：147.01 Kbytes Page：2 Pages

ZSELEC

淄博圣诺

BD8100YS

8.0 A SCHOTTKY BARRIER DIODE

文件：148.85 Kbytes Page：2 Pages

ZSELEC

淄博圣诺

BD8100YS

Power Schottky

PANJIT

強茂

BD81010MUV

Gamma voltage generated IC with built-in DAC

文件：1.49249 Mbytes Page：22 Pages

ROHM

罗姆

BD81010MUV-E2

Gamma voltage generated IC with built-in DAC

文件：1.49249 Mbytes Page：22 Pages

ROHM

罗姆

BD81026MUV

Gamma voltage generated IC with built-in DAC

文件：1.57748 Mbytes Page：22 Pages

ROHM

罗姆

BD81026MUV-E2

Gamma voltage generated IC with built-in DAC

文件：1.57748 Mbytes Page：22 Pages

ROHM

罗姆

BD8105FV

LED Indicator Driver

文件：353.17 Kbytes Page：13 Pages

ROHM

罗姆

BD8105FV

Power Management IC Series for Automotive Body Control LED Driver

文件：357.95 Kbytes Page：13 Pages

ROHM

罗姆

BD8105FV_09

Power Management IC Series for Automotive Body Control LED Driver

文件：357.95 Kbytes Page：13 Pages

ROHM

罗姆

BD8105FV_11

LED Indicator Driver

文件：353.17 Kbytes Page：13 Pages

ROHM

罗姆

BD8105FV-E2

LED Indicator Driver

文件：353.17 Kbytes Page：13 Pages

ROHM

罗姆

BD8108FM

White LED driver IC (under development) HSOP-M28 package

文件：814.97 Kbytes Page：16 Pages

ROHM

罗姆

BD810G

Plastic High Power Silicon Transistor

文件：86.03 Kbytes Page：5 Pages

ONSEMI

安森美半导体

BD810G

Plastic High Power Silicon Transistors

文件：95 Kbytes Page：4 Pages

ONSEMI

安森美半导体

MAX810

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

MAX810MTR

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

MAX810RTR

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

UPA810

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

UPA810TC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

BD810产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • Status：

    Active

  • Polarity：

    PNP

  • Type：

    General Purpose

  • VCE(sat) Max (V)：

    1.1

  • IC Cont. (A)：

    10

  • VCEO Min (V)：

    80

  • VCBO (V)：

    80

  • VEBO (V)：

    5

  • VBE(on) (V)：

    1.6

  • hFE Min：

    30

  • fT Min (MHz)：

    1.5

  • PTM Max (W)：

    90

  • Package Type：

    TO-220-3

BD810供应商更多...

更新时间：2026-5-14 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
贸泽芯城（深圳）电子科技有限公司
BD8100
ROHM/罗姆
23+
SOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
现代芯城（深圳）科技有限公司
BD810
26+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市科翼源电子有限公司
BD81021MUV-HVE2
ROHM
23+
QFN
3328
原厂原装正品
询价
深圳市坤融电子科技有限公司
BD81021MUV-HVE2
ROHM/罗姆
2025+
QFN
577
原装进口价格优 请找坤融电子!
询价
深圳市华斯顿科技有限公司
BD8100CS_L2_00001
PANJIT
25+23+
TO-252(DPAK)
23235
绝对原装正品全新进口深圳现货
询价
深圳市百诺芯科技有限公司
BD8100CS
PANJIT(强茂)
23+
N/A
21806
代理渠道,价格优势
询价
深圳市安富世纪电子有限公司
BD8100
ROHM
23+
SOP
7300
专注配单,只做原装进口现货
询价
艾睿（深圳）半导体有限公司
BD81000MUV
ROHM/罗姆
2447
QFN48
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市威尔健半导体有限公司
BD81000MUV-E2
ROHM/罗姆
23+
QFN
50000
全新原装正品现货,支持订货
询价
深圳市卓越微芯电子有限公司
BD8105FV-E2
ROHM
25+
SSOP20
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价

BD810芯片相关品牌

BD810规格书下载地址

BD810参数引脚图相关

BD810数据表相关新闻

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