isc Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain - : hFE =30@ IC= -2A • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • Complement to Type BD807 APPLICATIONS • Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 30 (Min) @ IC = 2.0 Adc • BD 808, 810 are complementary with BD 807, 890

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 30 (Min) @ IC = 2.0 Adc • BD 808, 810 are complementary with BD 807, 890

Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain - :hFE=30@lc=-2A • Collector-Emitter Sustaining Voltage- : VCEo(sus)= -60V(Min) • Complement to Type BD807 APPLICATIONS • Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Plastic High Power Silicon PNP Transistor

Audio Broadcast Quality 800A Series

Features Deep-drawn steel case with tin plated finish, with two convenient 6-32 mounting studs with hardware. Includes wire leads (minimum length of 4). Frequency response +/- 0.5 db max. from 50 Hz. to 15 Khz. Insertion loss of apx. 1 db. Maximum power level +15 dbm. (except 841A, 842A & 84

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