EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) • Low Saturation Voltage • Complement to Type BD799 APPLICATIONS • Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) • Low Saturation Voltage • Complement to Type BD799 APPLICATIONS • Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of

Trans GP BJT PNP 80V 8A

For Automotive 500 mA Adjustable Output LDO Regulators

General Description The BD800M5Wxxx-C series are linear regulators designed as low current consumption products for power supplies in various automotive applications. These products are designed for up to 45 V as an absolute maximum voltage and to operate until 500 mA for the output current

For Automotive 500 mA Adjustable Output LDO Regulators

General Description The BD800M5Wxxx-C series are linear regulators designed as low current consumption products for power supplies in various automotive applications. These products are designed for up to 45 V as an absolute maximum voltage and to operate until 500 mA for the output current

车载用500mA可变输出LDO稳压器

BD800M5Wxxx-C是低功耗电流线性稳压器，适合蓄电池直连的车载系统。本IC的规格为45V耐压、输出电流500mA、消耗电流17µA。输出电压精度：BD800M5WFPJ-C、BD800M5WHFP-C为±2%、BD800M5WFP2-C为±2.5%（不包括反馈电阻的精度。）。通过在ADJ端子上连接电阻，可在1.2V～16V的范围内设置输出电压。具备输出关断功能，在向EN端子施加HIGH电压时，IC输出ON。施加LOW电压时，输出OFF。本IC内置防止因输出短路等发生IC破坏的过流保护电路、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。输出相位补偿电容器可使用低E • AEC-Q100 Qualified (Grade 1)\n• EN Function (Output Shutdown Function)\n• Over Current Protection (OCP)\n• Thermal Shutdown Protection (TSD);

车载用500mA可变输出型LDO稳压器

BD800M5WHFP-C/BD800M5WFP2-C是一款低消耗电流的线性稳压器，适用于直接连接电池的车载系统。该IC具有45V耐压，500mA输出电流，17μA（Typ）消耗电流。 BD800M5WHFP-C的输出电压精度为±2％，BD800M5WFP2-C的输出电压精度为±2.5％。通过在ADJ引脚上连接一个电阻，输出电压可以在1.2V和16V之间设置。另外，还有输出关断功能，当EN引脚施加HIGH电压时，IC输出开启。施加LOW电压时输出关闭。该IC具有过流保护功能，用于防止因输出短路等原因导致IC损坏，还内置过热保护电路，用于防止IC因过载等原因造成热损坏。输出相位补偿电容器可使用低 • AEC-Q100 Qualified (Grade 1)\n• EN Function (Output Shutdown Function)\n• Over Current Protection (OCP)\n• Thermal Shutdown Protection (TSD);

For Automotive 500 mA Adjustable Output LDO Regulators

General Description The BD800M5Wxxx-C series are linear regulators designed as low current consumption products for power supplies in various automotive applications. These products are designed for up to 45 V as an absolute maximum voltage and to operate until 500 mA for the output current

封装/外壳：TO-252-5，DPak（4 引线 + 接片），TO-252AD 包装：管件 描述：IC REG LIN POS ADJ 500MA TO252 集成电路（IC） 线性 + 开关稳压器

封装/外壳：TO-263-6，D²Pak（5 引线 + 接片），TO-263BA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LIN POS ADJ 500MA HRP-5 集成电路（IC） 稳压器 - 线性

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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