型号 功能描述 生产厂家 企业 LOGO 操作
AUIRG4BC30USTRL

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IRF

AUIRG4BC30USTRL

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 600V 23A 100W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

AUIRG4BC30USTRL

IGBT 晶体管 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

更新时间:2026-3-16 17:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
Infineon Technologies
22+
D2PAK
9000
原厂渠道,现货配单
INFINEON
24+
TO-263
8500
原盒原盘原装正品假一罚十可开增票
INFINEON
22+
TO-263
20000
公司只做原装 品质保障
INFINEON
18+
TO-263
264
全新 发货1-2天
Infineon
原厂封装
9800
原装进口公司现货假一赔百
INFINEON
24+
con
10
现货常备产品原装可到京北通宇商城查价格
INFINEON/英飞凌
23+
TO-263
8000
专注配单,只做原装进口现货
INFINEON/英飞凌
23+
TO-263
7000
INFINEON
18+
TO-263
263
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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